New Approach for Trench Type SiC MOSFET
A new trench-type SiC MOSFET fabrication approach combining ICP dry etching and ALD/PECVD gate insulators for improved breakdown and device performance.
language
Samco Inc.
USA Website Next Gen
A new trench-type SiC MOSFET fabrication approach combining ICP dry etching and ALD/PECVD gate insulators for improved breakdown and device performance.