Introduction Plasma-enhanced chemical vapor deposition (PECVD) systems were initially developed for low-temperature film deposition. However, recent diversification in research and development needs has led to a demand for systems capable of high-temperature film deposition. PECVD systems, a cornerstone of Samco, utilize silicon tetrahydride (SiH4) gas for silicon nitride (SiN) and silicon dioxide (SiO2) film deposition.…
Atomic Layer Deposition Tutorial: Introduction to ALD Atomic Layer Deposition (ALD) is a thin-film deposition technique that utilizes self-limiting surface chemical reactions to achieve precise layer-by-layer growth. By alternately introducing and exhausting two or more reactants into the reaction chamber, ALD enables excellent film thickness control, superior step coverage, and high conformality. As demand for…
Micro- and nanoscale device research, deposition and etching processes using RIE and PECVD for advanced structures.
Introduction One example of a 4H-SiC power device is the MOSFET (Metal Oxide Semiconductor Field Effect Transistor). While planar MOSFETs have been developed in the past, trench-type MOSFETs have attracted attention to meet demands for high efficiency, such as “low on-resistance.” Samco has been working on trench processing using ICP etching equipment, which is essential…
Research on silicon spin qubits for quantum computing, using PD-2201LC, RIE-400iPC, and RIE-230LC.
UV Ozone Cleaning UV Ozone cleaning is a widely used method for preparing and cleaning surfaces in material research and device fabrication. As an alternative to oxygen plasma cleaning, it relies on a unique photochemical reaction to clean and modify surfaces with precision and efficiency. This page explains the fundamentals, advantages, and applications of UV…
Bosch Process Tutorial: Part 4. Loading and Microloading Effects in Si DRIE The loading effect and the microloading effect are common phenomena observed not only in deep Si etching but also in conventional Reactive Ion Etching (RIE), and are a barrier to achieving a depth uniformity in etching processes. These two effects strongly appear in…
Discover the innovative Aqua Plasma® technology that transforms gold surface treatment in semiconductor manufacturing. This approach prevents oxidation and enhances the hydrophilicity of gold surfaces, making it versatile for various applications. Our study shows how Aqua Plasma® reduces gold oxides and improves bonding, ensuring optimal performance in critical processes. Explore the benefits of Aqua Plasma® and its potential to enhance your manufacturing practices. Contact our team for more information or to arrange a demonstration with our production-scale equipment!
Bosch Process Tutorial: Part 3. Equipment Advances for the Bosch Process In this article, we introduce the hardware employed to fully utilize the capabilities of the Bosch process for deep etching of silicon. The equipment used for the Bosch process has many significant features that differentiate it from typical ICP etching tools. Inductively Coupled Plasma…
As one of the most promising materials in compound semiconductors, Gallium Nitride (GaN) demonstrates high electron mobility and a wide bandgap, enabling numerous next-generation applications. GaN-based devices, from High Brightness LEDs in consumer electronics to emerging power devices, are central to advancements in displays, lighting, and high-performance power systems. The unique AlGaN/GaN heterointerface generates a…