GaN Etching (Gallium Nitride)

Samco’s advanced GaN etching process delivers precise, damage-controlled plasma dry etching for high-quality Gallium Nitride (GaN) device fabrication. With applications ranging from high-power transistors and RF components to microLED and laser diode manufacturing, Samco systems provide superior process stability, high selectivity, and flexible control of etch profiles.

Built on decades of plasma process expertise, our ICP-RIE systems such as the RIE-400iP and RIE-800iPC enable finely tuned GaN etching performance for next-generation semiconductor and optoelectronic devices.

Advanced Plasma Etching for GaN Devices

Samco’s GaN etching technology supports a wide range of compound semiconductor applications, including LEDs, laser diodes, and GaN-based power devices. Our systems achieve excellent profile control and high selectivity between GaN and AlGaN, while minimizing plasma-induced damage on sensitive device layers.

Key performance features include:

  • Damage reduction using low RF bias power
  • High etch selectivity of 60:1 (GaN/AlGaN)
  • Wide control of trench shape—from vertical to forward taper
  • Stable etching performance across various substrate types (sapphire, SiC, etc.)

GaN Etching Benefits & Capabilities

Damage reduction on AlGaN layer

0

Bias Power, Low Damage Etch

Plasma ashing employs ions and radicals generated in plasma to remove photoresist. This process uses two primary mechanisms:

  • Physical sputtering by ion bombardment.
  • Chemical reactions forming volatile molecules like H₂O and CO₂.
AlGaN Damage Reduction Figure Showing Sheet Resistance, Mobility, and Carrier Concentration very close to original values after etching with 0W Bias, as opposed to a large change after etching with 25W Bias.

High etch selectivity of GaN over AlGaN

60:1

Selectivity Rate

 

Samco solved the selectivity issue by using a small flow of an additive gas (“Gas X”) in a chlorine-based gas plasma mixture. As a result, an etch selectivity of 60:1 (GaN/AlGaN) is achieved, and the etch process is successfully stopped on the AlGaN interface without over-etching. Additionally, the plasma damage on the AlGaN layer is reduced by employing lower RF bias power.

Figure showing the selectivity control of GaN/AlGaN when etching using "Gas X"
This data is the result of a die/chip sample. Contact us for the wafer process.

GaN Etching Process Data

GaN Forward taper trench etching for power device SEM

GaN forward taper trench etch

Wide control of the trench shape from vertical to forward tapered processing. We used GaN epitaxially grown on sapphire substrates and etched them with Samco’s RIE-400iP.

Products

RIE-400iP
GaN Trench Etching for Power Device SEM

GaN deep trench etch

For fabrication of GaN-based light emitting devices. We also provide equipment for trench and mesa etching for 4H-SiC power devices.

Products

RIE-400iP
High Selectivity SEM of GaN/AlGaN

High selectivity etching of GaN/AlGaN

Samco offers high selectivity etching of GaN/AlGaN for GaN RF device fabrication by ICP plasma etching system.

Products

RIE-230iP
Reverse Taper Etching of GaN for HBLEDs

Reverse taper etching of GaN for HBLEDs

Light confinement is achieved by making the element end of the LED inverted taper, which improves the intensity of light emission.

Products

RIE-350iPC

Related Technical Reports