Category: Diamond Etch

21 Jun

Scientific paper on diamond power device fabrication from NIMS, Japan

Samco 2017 Customer, Diamond Etch, Other Materials Etch, Power Devices, SAMCO Customer Publication

Deposition of TiO2/Al2O3 bilayer on hydrogenated diamond for electronic devices: Capacitors, field-effect transistors, and logic inverters

J. W. Liu1, M. Y. Liao1, M. Imura1, R. G. Banal1, and Y. Koide2
1 Research Center for Functional Materials, National Institute for Materials Science (NIMS), 1-1 Namiki,
Tsukuba, Ibaraki 305-0044, Japan
2 Research Network and Facility Services Division, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
JOURNAL OF APPLIED PHYSICS 121, 224502 (2017)

Diamond-based power devices are expected to see emerging applications which require high breakdown voltage. In this paper, MOSFET, MOS capactors and MOS logic inverter were fabricated using hydro-generated diamond.
Plasma etching of H-diamond channel layer was performed using Samco RIE etcher, RIE-200NL. Samco offers several plasma etching systems for customers who actively working on diamond power device research. For more details of plasma etching systems for diamond etching, please visit the product pages below.

RIE Plasma Etcher
ICP Etcher

21 May

Scientific paper on hydrogenated diamond MOSFET by NIMS, Japan

Samco 2017 Customer, Diamond Etch, Other Materials Etch, SAMCO Customer Publication

Enhancement-mode hydrogenated diamond metal-oxide-semiconductor field-effect transistors with Y2O3 oxide insulator grown by electron beam evaporator

J. W. Liu1 H. Oosato2 M. Y. Liao1 and Y. Koide3
1 Research Center for Functional Materials, National Institute for Materials Science (NIMS), 1-1 Namiki,
Tsukuba, Ibaraki 305-0044, Japan
2 Nanofabrication Platform, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
3 Research Network and Facility Services Division, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
APPLIED PHYSICS LETTERS 110, 203502 (2017)

Hydrogenated diamond-based MOSFET is a promising next-generation power device as well as SiC- or GaN-based devices. The device research on this material is still under development.
In this paper, H-diamond MOSFET with an Y2O3 oxide insulator was fabricated. Samco RIE etcher, RIE-200NL was used for mesa etching of H-diamond layer.

Samco RIE etchers offer diamond plasma etching process solutions for emerging power device research communities. For more details on our equipment lineup and specifications, please visit the product page below.
RIE Etcher for R&D and Production

If you are interested in diamond etching processes, please visit the process data page below.
Diamond Plasma Etching

RIE plasma etcher

22 Dec

Scientific Paper on Boron-doped Diamond Electrode Fabrication by Tokyo University of Science

Samco 2016 Customer, Diamond Etch, Other Materials Etch, SAMCO Customer Publication

Hierarchically nanostructured boron-doped diamond electrode surface

Takeshi Kondoa, b, c, Keita Yajimaa, Tsuyoshi Katoa, Masahiro Okanod, Chiaki Terashimab, c, Tatsuo Aikawaa, Masanori Hayaseb, d, Makoto Yuasaa, b, c

a Department of Pure and Applied Chemistry, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
b Research Institute for Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
c ACT-C/JST, 4-1-8 Honcho, Kawaguchi, Saitama 333-0012, Japan
d Department of Mechanical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
Diamond and Related Materials (2016)
A boron-doped diamond (BDD) electrode with a large specific surface area was fabricated. The combination of thermal treatment and whisker formation by diamond plasma etching was employed for nano-texturing of diamond surfaces. Samco open-load Reactive Ion Etcher, RIE-10NR was used for diamond plasma etching process.

Diamond Plasma Etching

For more details of our diamond plasma etching technologies and capabilities, please visit the process data page below.
Diamond Plasma Etching (RIE and ICP Etch)

25 Oct

Scientific Paper on Diamond MOSFET Fabrication Using Diamond Plasma Etching by NIMS, Japan

Samco 2016 Customer, Diamond Etch, Other Materials Etch, Power Devices, SAMCO Customer Publication

Design and fabrication of high-performance diamond triple-gate field-effect transistors

Jiangwei Liu 1, Hirotaka Ohsato 2, Xi Wang 1, Meiyong Liao 3 & Yasuo Koide 4
1 International Center for Young Scientists, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
2 Nanofabrication Platform, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan.
3 Optical and Electronic Materials Unit, NIMS, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
4 Research Network and Facility Services Division, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki, 305-0047, Japan.
Scientific Reports 6, Article number: 34757 (2016)

Diamond is considered to be a material for next-geneDiamond Periodic Tableration power semiconductor devices due to high thermal conductivity and breakdown voltage. In this research, triple-gate metal-oxide-semiconductor field-effect transistor (MOSFET) device was fabricated using a hydrogenated diamond (H-diamond) substrate. In device fabrication, Samco open-load Reactive Ion Etching (RIE) system at National Institute for Materials Science (NIMS) was used for diamond plasma etching to form a diamond mesa structure.

For our process capabilities of diamond plasma etching, please visit the process data page below.
Diamond Plasma Etching Process Data (RIE Etching & ICP Etching)
Also, for more information on process equipment which are suitable for diamond plasma etching, please visit the product page below,
Reactive Ion Etching (RIE) Systems
ICP Etching Systems

27 Nov

Scientific Paper on Whisker Fabrication Using Diamond Etching from Nagoya University Team

Samco 2011 Customer, Diamond Etch, Other Materials Etch, SAMCO Customer Publication

Fabrication of Vertically Aligned Diamond Whiskers from Highly Boron-Doped Diamond by Oxygen Plasma Etching

Chiaki Terashima1, Kazuki Arihara4, Sohei Okazaki4, Tetsuya Shichi4, Donald A. Tryk5, Tatsuru Shirafuji2, Nagahiro Saito1, 2, 3, Osamu Takai1, 2, 3, and Akira Fujishima4, 6
Research Center for Materials Backcasting Technology, Graduate School of Engineering, and 2Department of Materials, Physics and Energy Engineering, Graduate School of Engineering, EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
Technology Research and Development Department, General Technology Division, Central Japan Railway, 1545-33 Ohyama, Komaki City, Aichi 485-0801, Japan
Fuel Cell Nanomaterials Center, University of Yamanashi, 4-3-11 Takeda, Kofu, Yamanashi 400-8511, Japan
Tokyo University of Science, 1-3 Kagurazaka, Shinjyuku-ku, Tokyo 162-8601, Japan
ACS Appl. Mater. Interfaces, 2011, 3 (2), pp 177–182
DOI: 10.1021/am1007722

Samco open-load RIE Plasma Etching System was used for diamond plasma etching to fabricate vertically aligned diamond whiskers.

diamond etching
For more details of our diamond plasma etching technologies, please visit the diamond process data page below.
Diamond Dry Etching Process (RIE or ICP-RIE)

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