Effect of oxygen terminated surface of boron-doped diamond thin-film electrode on seawater salinity sensing

Dan Shi ^a,b, Lusheng Liu ^a, Zhaofeng Zhai ^a, Bin Chen ^a,b, Zhigang Lu ^a,b, Chuyan Zhang ^a,c, Ziyao Yuan ^a,b, Meiqi Zhou ^a,b, Bing Yang ^a , Nan Huang ^a and Xin Jiang ^a,c
a Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China
^b School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, 110016, China
^c Institute of Materials Engineering, University of Siegen, Paul-Bonatz-Str. 9-11, Siegen, 57076, Germany
Journal of Materials Science & Technology, Volume 86, Pages 1-10 (2021)

Boron-doped diamond is an interesting material for sensing application. Samco open-load RIE system RIE-10NR was used for patterning and surface treatment in oxygen plasma.

Deposition of TiO₂/Al₂O₃ bilayer on hydrogenated diamond for electronic devices: Capacitors, field-effect transistors, and logic inverters

J. W. Liu¹, M. Y. Liao¹, M. Imura¹, R. G. Banal¹, and Y. Koide^2
1 Research Center for Functional Materials, National Institute for Materials Science (NIMS), 1-1 Namiki,
Tsukuba, Ibaraki 305-0044, Japan
² Research Network and Facility Services Division, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
JOURNAL OF APPLIED PHYSICS 121, 224502 (2017)

Diamond-based power devices are expected to see emerging applications which require high breakdown voltage. In this paper, MOSFET, MOS capactors and MOS logic inverter were fabricated using hydro-generated diamond.
Plasma etching of H-diamond channel layer was performed using Samco RIE etcher, RIE-200NL. Samco offers several plasma etching systems for customers who actively working on diamond power device research. For more details of plasma etching systems for diamond etching, please visit the product pages below.

RIE Plasma Etcher
ICP Etcher

Enhancement-mode hydrogenated diamond metal-oxide-semiconductor field-effect transistors with Y₂O₃ oxide insulator grown by electron beam evaporator

J. W. Liu¹ H. Oosato² M. Y. Liao¹ and Y. Koide^3
1 Research Center for Functional Materials, National Institute for Materials Science (NIMS), 1-1 Namiki,
Tsukuba, Ibaraki 305-0044, Japan
² Nanofabrication Platform, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
³ Research Network and Facility Services Division, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
APPLIED PHYSICS LETTERS 110, 203502 (2017)

Hydrogenated diamond-based MOSFET is a promising next-generation power device as well as SiC- or GaN-based devices. The device research on this material is still under development.
In this paper, H-diamond MOSFET with an Y₂O₃ oxide insulator was fabricated. Samco RIE etcher, RIE-200NL was used for mesa etching of H-diamond layer.

Samco RIE etchers offer diamond plasma etching process solutions for emerging power device research communities. For more details on our equipment lineup and specifications, please visit the product page below.
RIE Etcher for R&D and Production

If you are interested in diamond etching processes, please visit the process data page below.
Diamond Plasma Etching

Hierarchically nanostructured boron-doped diamond electrode surface

Takeshi Kondo^{a, b, c}, Keita Yajima^a, Tsuyoshi Kato^a, Masahiro Okano^d, Chiaki Terashima^{b, c}, Tatsuo Aikawa^a, Masanori Hayase^{b, d}, Makoto Yuasa^{a, b, c}

^a Department of Pure and Applied Chemistry, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
^b Research Institute for Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
^c ACT-C/JST, 4-1-8 Honcho, Kawaguchi, Saitama 333-0012, Japan
^d Department of Mechanical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
Diamond and Related Materials (2016)
A boron-doped diamond (BDD) electrode with a large specific surface area was fabricated. The combination of thermal treatment and whisker formation by diamond plasma etching was employed for nano-texturing of diamond surfaces. Samco open-load Reactive Ion Etcher, RIE-10NR was used for diamond plasma etching process.

For more details of our diamond plasma etching technologies and capabilities, please visit the process data page below.
Diamond Plasma Etching (RIE and ICP Etch)

Design and fabrication of high-performance diamond triple-gate field-effect transistors

Jiangwei Liu ¹, Hirotaka Ohsato ², Xi Wang ¹, Meiyong Liao ³ & Yasuo Koide ^4
1 International Center for Young Scientists, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
² Nanofabrication Platform, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan.
³ Optical and Electronic Materials Unit, NIMS, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
⁴ Research Network and Facility Services Division, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki, 305-0047, Japan.
Scientific Reports 6, Article number: 34757 (2016)

Diamond is considered to be a material for next-generation power semiconductor devices due to high thermal conductivity and breakdown voltage. In this research, triple-gate metal-oxide-semiconductor field-effect transistor (MOSFET) device was fabricated using a hydrogenated diamond (H-diamond) substrate. In device fabrication, Samco open-load Reactive Ion Etching (RIE) system at National Institute for Materials Science (NIMS) was used for diamond plasma etching to form a diamond mesa structure.

For our process capabilities of diamond plasma etching, please visit the process data page below.
Diamond Plasma Etching Process Data (RIE Etching & ICP Etching)
Also, for more information on process equipment which are suitable for diamond plasma etching, please visit the product page below,
Reactive Ion Etching (RIE) Systems
ICP Etching Systems

Fabrication of Vertically Aligned Diamond Whiskers from Highly Boron-Doped Diamond by Oxygen Plasma Etching

Chiaki Terashima¹, Kazuki Arihara⁴, Sohei Okazaki⁴, Tetsuya Shichi⁴, Donald A. Tryk⁵, Tatsuru Shirafuji², Nagahiro Saito^{1, 2, 3}, Osamu Takai^{1, 2, 3}, and Akira Fujishima^{4, 6
1} Research Center for Materials Backcasting Technology, Graduate School of Engineering, and ²Department of Materials, Physics and Energy Engineering, Graduate School of Engineering, ³ EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
⁴ Technology Research and Development Department, General Technology Division, Central Japan Railway, 1545-33 Ohyama, Komaki City, Aichi 485-0801, Japan
⁵ Fuel Cell Nanomaterials Center, University of Yamanashi, 4-3-11 Takeda, Kofu, Yamanashi 400-8511, Japan
⁶ Tokyo University of Science, 1-3 Kagurazaka, Shinjyuku-ku, Tokyo 162-8601, Japan
ACS Appl. Mater. Interfaces, 2011, 3 (2), pp 177–182
DOI: 10.1021/am1007722

Samco open-load Plasma Etching System was used for diamond plasma etching to fabricate vertically aligned diamond whiskers.

For more details of our diamond plasma etching technologies, please visit the diamond process data page below.
Diamond Dry Etching Process (RIE or ICP-RIE)