Scientific Paper on AlGaN/GaN MOSFET from Dalian University of Technology and The University of Tokushima

August 8, 2014 Samco 2014 Customer, Power Devices, SAMCO Customer Publication, Silicon/Dielectrics PECVD, SiO2 PECVD

Process dependency on threshold voltage of GaN MOSFET on AlGaN/GaN heterostructure

Qingpeng Wanga, b, Ying , b, Takahiro Miyashitac, Shin-ichi Motoyamac, Liuan Lib, Dejun Wanga, Yasuo Ohnob and Jin-Ping Aob
a School of Electronic Science and Technology, Dalian University of Technology, 2 Linggong Road, Ganjingzi District, Dalian 116024, China
b Institute of Technology and Science, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
c Research and Development Department, SAMCO Inc., 36 Waraya-cho, Takeda, Fushimi-ku, Kyoto 612-8443, Japan
Solid-State Electronics (2014) 99, Pages 59–64

Samco PECVD system was used for SiO2 insulation film deposition.
This paper is collaboration work of Dalian University of Technology, The University of Tokushima and Samco.

SiO2 Periodic Table
For more details of our SiO2 PECVD technologies, please visit the page below.
SiO2 PECVD Process

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