Scientific Paper on GaN MOSFET Fabrication Using SiO2 PECVD by University of Tokushima

July 15, 2015 Samco 2015 Customer, Power Devices, Samco Customer Publication, Silicon/Dielectrics PECVD, SiO2 PECVD

A self-aligned gate GaN MOSFET using an ICP-assisted low-temperature Ohmic process

Qingpeng Wang1,2, Ying Jiang1,2, Jiaqi Zhang1,2, Kazuya Kawaharada1, Liuan Li1, Dejun Wang2 and Jin-Ping Ao1
1 Institute of Technology and Science, the University of Tokushima, Tokushima 770-8506, Japan
2 School of Electronic Science and Technology, Dalian University of Technology, Dalian 116023, People’s Republic of China
Semicond. Sci. Technol. (2015) 30 075003

Samco PECVD system was used for gate oxide (SiO2) formation in GaN MOSFET fabrication.SiO2 Periodic Table

For our process solutions of GaN power device fabrication, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication/

Also, SiO2 PECVD process data can be found in the page below.
SiO2 PECVD Process