Scientific Paper on MEMS Device Fabrication Using SiO2 Plasma Etching by Kyoto Institute of Technology
Buckling behavior of piezoelectric diaphragms for highly sensitive structures of ultrasonic microsensors controlled through intrinsic stress of PZT films
Yamashita, K.; Arai, K.; Tanaka, H.; Nishiumi, T.; Noda, M.
Graduate School of Science & Technology, Kyoto Institute of Technology, Kyoto, Japan
presented at Applications of Ferroelectric, International Symposium on Integrated Functionalities and Piezoelectric Force Microscopy Workshop (ISAF/ISIF/PFM), 2015 Joint IEEE International Symposium on the , vol., no., pp.44-47, 24-27 May 2015
SAMCO silicon DRIE system at Kyoto Institute of Technology was used for Silicon Dioxide (SiO2) dry etching.
Our DRIE systems are equipped with SiO2 etch kit for high-speed SiO2 plasma etching. For more details, please visit our product page below.
Silicon Deep Reactive Ion Etching (DRIE) Systems
Also, for our process capabilities of SiO2 plasma etching, please visit the process data page below.
SiO2 Plasma Etching Process Data (RIE or ICP Etch)