Figure 1. SEM image of a SiC trench processed by RIE-800iPC

ICP Etching Process for Realizing SiC Trench MOSFETs

Technical reports

Introduction One example of a 4H-SiC power device is the MOSFET (Metal Oxide Semiconductor Field Effect Transistor). While planar MOSFETs have been developed in the past, trench-type MOSFETs have attracted attention to meet demands for high efficiency, such as “low on-resistance.” Samco has been working on trench processing using ICP etching equipment, which is essential…

Electric car on charging spot with solar panels and wind energy in front of landscape (Showing application of power devices using SiC Trench MOSFETs

New Approach for Trench Type SiC MOSFET

Technical reports

Introduction Compared to the mainstream semiconductor Si, the wide bandgap semiconductor 4H-SiC has excellent material qualities including higher electrical breakdown strength and higher thermal conductivity. Therefore, 4H-SiC has been studied in recent years as a new material to improve miniaturization and energy saving in power devices. Currently, it is being developed not only for device…