Northwestern University – NUFAB: Nasir Basit, PhD.
Micro- and nanoscale device research, deposition and etching processes using RIE and PECVD for advanced structures.
ICP Etching Process for Realizing SiC Trench MOSFETs
Advanced ICP trench etching for SiC MOSFETs achieving over 700 nm/min etch rates, rounded trench bottoms, and high uniformity on 6-inch wafers.
National Institute of Advanced Industrial Science and Technology (AIST): Takahiro Mori Ph.D.
Research on silicon spin qubits for quantum computing, using PD-2201LC, RIE-400iPC, and RIE-230LC.