Category: 2013 Customer
Scientific Paper on High-aspect-ratio Nanoimprinted Structure Fabrication from National Tsing Hua University
Zhi-Hao Xu1, Chien-Li1, Cheng-Kuo1, Sheng-Ching3 and Tsung-Shune Chin2
1 Department of Power Mechanical Engineering, National Tsing Hua University, Hsinchu 30013, TAIWAN
2 Department of Materials Science & Engineering, Feng Chia University, Taichung 40724, TAIWAN
3 Department of Mechanical Engineering, National United University, Miaoli 36003, TAIWAN
Microsystem Technologies (2014) 20, 10, pp 1949-1953
SAMCO Plasma Cleaner was used for photoresist stripping/trimming in high-aspect-ratio structure.
For more details of our photoresist stripping & removal process solutions, please visit the page below.
Plasma Ashing & Stripping of Photoresist
So Youn Kim 1, Jessica Gwyther 2, Ian Manners 2, Paul M. Chaikin 3, and Richard A. Register 1
1 Department of Chemical and Biological Engineering, Princeton University, Princeton, NJ, USA
2 School of Chemistry, University of Bristol, Bristol, United Kingdom
3 Department of Physics, New York University, New York, USA
Adv. Mater., 26, 791-795 (2014)
Samco Silicon DRIE System at Princeton University was used for deep silicon etching using the Bosch Process.
For more details of our deep silicon etching capabilities, please visit the page below.
Si DRIE (Deep Reactive Ion Etching) for MEMS and TSV
Silicon Deep Etching Using the Bosch Process
Enhancement of electrical conductivity and electrochemical activity of hydrogenated amorphous carbon by incorporating boron atoms
Hiroshi Naragino, Kohsuke Yoshinaga, Akira Nakahara, Sakuya Tanaka and Kensuke Honda
Graduate school of Science and Engineering, Yamaguchi University, 1677-1, Yoshida, Yamaguchi-shi, Yamaguchi 753-8512, Japan
Journal of Physics: Conference Series, 441, 2013 conference 1
Process and film properties of conductive boron-doped hydrogenated amorphous carbon (B-DLC) thin films was studied in this research. Samco PECVD system at Yamaguchi University was used for DLC film deposition.
Samco offers PECVD systems and process technology for deposition of various types of films such as SiO2, SiNx, TiO2, amorphous carbon (a-Si), SiON, SiCN and DLC.
For more details of our system lineup, please visit the product pages below.
Anode PECVD Systems for High-quality Film Deposition
Cathode PECVD Systems for High-speed SiO2 and SiNx Film Deposition under 80 °C
Fabrication of silicon and carbon based wide-gap semiconductor thin films for high conversion efficiency
Kohsuke Yoshinaga, Hiroshi Naragino, Akira Nakahara and Kensuke Honda
Graduate school of Science and Engineering, Yamaguchi University, 1677-1, Yoshida,
Yamaguchi-shi, Yamaguchi, 753-8512, Japan
Journal of Physics: Conference Series (2013) 441, conference 1
SAMCO PECVD System was used for deposition of Nitrogen-doped amorphous silicon carbide films (N-doped a-SiC) to investigate the film properties.
Fabrication of high-aspect-ratio double-slot photonic crystal waveguide in InP heterostructure by inductively coupled plasma etching using ultra-low pressure
Kaiyu Cui, Yongzhuo Li, Xue Feng, Yidong Huang and Wei Zhang
Department of Electronic Engineering, Tsinghua National Laboratory for Information Science and Technology, Tsinghua University, Beijing 100084, China
AIP ADVANCES (2013) 3, 022122
InP photonic crystal waveguide was fabricated using SAMCO ICP Etch System.
For more details of our InP dry etching process capabilities, please visit the page below.
InP Dry Etching Process (RIE or ICP-RIE)
R. A. Ferreyra, X. Li, F. Zhang, C. Zhu, N. Izyumskaya, C. Kayis, V. Avrutin, Ü. Özgür, and H. Morkoç
Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA, USA 23284-3072
Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 86252B (March 27, 2013)
SAMCO ICP Etch System at Virginia Commonwealth University was used for mesa isolation of AlGaN/AlN/GaN heterostructures.
For our process solutions for GaN power device fabrication, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication
Also, for more information on our GaN plasma etching process capabilities, please visit the process data page below.
GaN Plasma Etching Process (RIE or ICP Etching)
Scientific Paper on Multi-channel PMMA Microfluidic Biosensor by King Mongkut’s University and Cornell University
Nongnoot Wongkaewa,b, Peng Heb, Vanessa Kurthb, Werasak Surareungchaia, and Antje J. Baeumnerb
aSchool of Bioresources and Technology, King Mongkut’s University of Technology Thonburi, Bangkhuntien, Bangkok 10150,Thailand bDepartment of Biological and Environmental Engineering, Cornell University, 202 Riley Robb Hall, Ithaca, NY 14853, USA
Anal Bioanal Chem. 2013 July ; 405(18): 5965–5974. doi:10.1007/s00216-013-7020-0.
Samco UV-Ozone Cleaner at Cornell University was used for oxidation of PMMA to generate carboxylic groups on the surface in microfluidic biosensor fabrication. Samco UV-Ozone cleaners are used for many R&D labs of polymer biosensor fabrication for bonding of polymer materials, such as PDMS, PMMA , COP & COC.
Makoto Ohkado1, Tsuyoshi Nomura1, Atushi Miura1, Hisayoshi Fujikawa1, Naoki Ikeda2, Yoshimasa Sugimoto2 and Shinji Nishiwaki3
1Toyota Central R&D Labs. Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192, Japan
2National Institute for Material Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
3Kyoto University, Yoshida Honmachi, Sakyo-ku, Kyoto, Kyoto 606-8501, Japan
Transactions of the Materials Research Society of Japan (2013) 38, No. 2 p. 167-170
For more details of our SiO2 dry etching capabilities, please visit the page below.
SiO2 Dry Etching Process (RIE or ICP-RIE)
Mariana C. Prado1, Deep Jariwala2, Tobin J. Marks2,3 and Mark C. Hersam2,3
1 Departamento de Física, Universidade Federal de Minas Gerais, Av. Antônio Carlos, 6627, 31270-901 Belo Horizonte, Brazil
2 Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA
3 Department of Chemistry, Northwestern University, Evanston, Illinois 60208, USA
Appl. Phys. Lett. (2013) 102, 193111
Samco RIE System at Northwestern University was used for investigation of reactive ion etching process of graphene.
Samco RIE systems are versatile tools for plasma etching of various materials including Si, SiO2, SiNx, metal, polymer and carbon-based materials.
For more information on our RIE system, please visit the product page below.
RIE Etching Systems
Scientific Paper on Surface Treatment to Reduce the Resistance of AlGaN/GaN HEMT from MIT and University of Tsukuba
Formation of low resistance ohmic contacts in GaN-based high electron mobility transistors with BCl3 surface plasma treatment
Tatsuya Fujishima1, Sameer Joglekar1, Daniel Piedra1, Hyung-Seok Lee1, Yuhao Zhang1, Akira Uedono2 and Tomás Palacios1
1 Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139-4307, USA
2 Division of Applied Physics, Faculty of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
Appl. Phys. Lett. 103, 083508 (2013)
Surface treatment technique to reduce the resistance and to increase the uniformity of ohmic contacts in AlGaN/GaN high electron mobility transistors was developed using Samco ICP etch system.
For more details of our process solutions for GaN power device fabrication, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication