Category: 2016 Customer
Consequences of plasma oxidation and vacuum annealing on the chemical properties and electron accumulation of In2O3 surfaces
Theresa Berthold1, Julius Rombach2 Thomas Stauden1 Vladimir Polyakov3
Volker Cimalla3 Stefan Krischok1 Oliver Bierwagen2 and Marcel Himmerlich1
1 Institut fur Mikro- und Nanotechnologien MacroNano, Technische Universit€at Ilmenau, PF 100565, 98684 Ilmenau, Germany
2 Paul-Drude-Institut fur Festk€orperelektronik, Hausvogteiplatz 5–7, 10117 Berlin, Germany
3 Fraunhofer-Institut fur Angewandte Festk€orperphysik, Tullastraße 72, 79108 Freiburg, Germany
Journal of Applied Physics 120, 245301 (2016)
Indium Oxide (In2O3) is used for metal contacts of electronic devices. It is known that defects (oxygen vacancies) and impurities (adsorbates) of In2O3 films change electron concentration. In previous papers, surface treatment techniques using plasma technologies were investigated to reduce the defects and impurities of In2O3 films.
In this paper, Samco ICP plasma etching tool at Paul-Drude-Institut was used for plasma surface oxidation of In2O3, and the samples were treated by subsequent vacuum annealing. It was found that oxygen plasma treatment reduced adsorbed carbon impurities and removed surface defect states, attributed to oxygen vacancies.
Takeshi Kondoa, b, c, Keita Yajimaa, Tsuyoshi Katoa, Masahiro Okanod, Chiaki Terashimab, c, Tatsuo Aikawaa, Masanori Hayaseb, d, Makoto Yuasaa, b, c
a Department of Pure and Applied Chemistry, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
b Research Institute for Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
c ACT-C/JST, 4-1-8 Honcho, Kawaguchi, Saitama 333-0012, Japan
d Department of Mechanical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
Diamond and Related Materials (2016)
A boron-doped diamond (BDD) electrode with a large specific surface area was fabricated. The combination of thermal treatment and whisker formation by diamond plasma etching was employed for nano-texturing of diamond surfaces. Samco open-load Reactive Ion Etcher, RIE-10NR was used for diamond plasma etching process.
For more details of our diamond plasma etching technologies and capabilities, please visit the process data page below.
Diamond Plasma Etching (RIE and ICP Etch)
Fabrication of SiNx Thin Film of Micro Dielectric Barrier Discharge Reactor for Maskless Nanoscale Etching
Qiang Li1, Jie Liu1, Yichuan Dai1, Wushu Xiang1, Man Zhang1, Hai Wang2 and Li Wen1
1 Department of Precision Machinery and Precision Instrumentation, University of Science and Technology of China, Hefei 230027, China
2 School of Mechanical and Automotive Engineering, Anhui Polytechnic University, Wuhu 241000, China
Micro dielectric barrier discharge (MDBD) devices have some potential interesting applications such as surface modification. Silicon Nitride (SiNx) film can be used as a dielectric barrier layer material in MDBD devices. However, there are challenges of crack and wrinkle formation due to mechanical stress of SiNx film in device fabrication. Samco plasma CVD system was used for SiNx film deposition. With optimization of deposition process recipe, compressive stress of SiNx film was mitigated to suppress crack formation.
For more details of our SiNx film deposition capabilities, please visit the process data page below.
SiNx PECVD Process
Influence of top electrodes to vibration modes in impulse responses of MEMS piezoelectric diaphragms for ultrasonic microsensors
T. Nishioka, T. Nishiumi, K. Yamashita and M. Noda
Graduate School of Science and Technology, Kyoto Institute of Technology, Matsugasaki, 606-8585, Japan
2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK), Kyoto, 2016, pp. 1-2.
Ultrasonic micro sensors with piezoelectric diaphragms were fabricated to investigate the relationship between vibration mode and device structure of electrode and the diaphragms. Samco Deep Reactive Ion Etching system was used for anisotropic silicon plasma etching in the Bosch Process over SiO2 mask.
For more details of our silicon plasma etching capabilities, please visit the process data pages below.
Marko J. Tadjerz, Nadeemullah A. Mahadik, Virginia D. Wheeler, Evan R. Glaser, Laura Ruppalt, Andrew D. Koehler, Karl D. Hobart, Charles R. Eddy Jr. and Fritz J. Kub
United States Naval Research Laboratory, Washington, DC 20375, USA
ECS J. Solid State Sci. Technol. 2016 volume 5, issue 9, P468-P470
Gallium Oxide (Ga2O3) is a wide bandgap material with high breakdown voltage, and it is a promising material for power device applications. Compared to other wide bandgap materials such as Silicon Carbide (SiC) and Gallium Nitride (GaN), the device research using this material is still primitive. However, β-Ga2O3 substrates are commercially available, and more and more researchers are getting interested in its unique material properties.
Here, β-Ga2O3 MOSFET was fabricated using commercially available β-Ga2O3 substrates. Samco UV-Ozone Cleaner at United States Naval Research Laboratory was used for surface cleaning of SiO2/Si substrate in sample preparation.
Scientific Paper on Anti-reflective Surface Fabrication by Si Plasma Etch from Yokohoma National University Team
Yoshiaki Nishijima1 Ryosuke Komatsu1 Shunsuke Ota1, Gediminas Seniutinas2 Armandas Balčytis2,3 and Saulius Juodkazis2
1 Department of Electrical and Computer Engineering, Graduate School of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-Ku, Yokohama 240-8501, Japan
2 Centre for Micro-Photonics, Faculty of Engineering and Industrial Sciences, Swinburne University of Technology, Hawthorn, VIC 3122, Australia
3 Institute of Physics, Center for Physical Sciences and Technology, 231 Savanoriu¸ Avenue, LT-02300 Vilnius, Lithuania
APL PHOTONICS 1, 076104 (2016)
Anti-reflective surfaces were created employing plasma etching technologies. Samco ICP-RIE etcher was used for black silicon plasma etching (b-Si) to fabricate nanospike structures using fluorine chemistry.
For more process capabilities of our silicon plasma etching including the Bosch Process Etching, please visit the process data pages below.
Scientific Paper on Polymer Waveguide Modulator Fabrication Using TiO2 Plasma Etching from Kyushu University Team
Feng Qiu1 Hiroki Miura2, Andrew M. Spring1, Jianxun Hong1, Daisuke Maeda3, Masa-aki Ozawa3, Keisuke Odoi3 and Shiyoshi Yokoyama1,2
1 Institute for Materials Chemistry and Engineering, Kyushu University, 6-1 Kasuga-koen Kasuga-city, Fukuoka 816-8580, Japan
2 Department of Molecular and Material Sciences, Kyushu University, 6-1 Kasuga-koen Kasuga-city, Fukuoka 816-8580, Japan
3 Nissan Chemical Industries, Ltd., 2-10-1 Tuboi Nishi, Funabashi, Chiba 274-8507, Japan
Appl. Phys. Lett. (2016) 109, 173301
Waveguide modulator device using organic electro-optic (EO) materials was studied in this research. Samco ICP plasma etcher was used for slot structure formation for TiO2 plasma etching in fluorine chemistry during device fabrication.
Scientific Paper on Nano-channel Device Fabrication Using Quartz Plasma Etching from Nagoya University Team
Xiaoyin Suna,b, Takao Yasuia,b,c, Takeshi Yanagidad,e, Noritada Kajia,b, Sakon Rahonga,b, Masaki Kanaid, Kazuki Nagashimad, Tomoji Kawaie and Yoshinobu Babaa,b,f
a Department of Applied Chemistry, Graduate School of Engineering, Nagoya University, Nagoya, Japan;
b ImPAC T Research Center for Advanced Nanobiodevices, Nagoya University, Nagoya, Japan;
c Japan Science and Technology Agency (JST), PRESTO, Saitama, Japan;
d Institute of Materials Chemistry and Engineering, Kyushu University, Fukuoka, Japan;
e Institute of Scientific and Industrial Research, Osaka University, Osaka, Japan;
f Health Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Takamatsu, Japan
Science and Technology of Advanced Materials (2016) VOL . 17, NO . 1, 644–649
A new method to analyze DNA methylation was proposed using a nano-channel device in this research. Samco RIE etch tool was used for quartz plasma etching over Cr hard mask to fabricate nano-channel structures. The nano-channel device is effective to detect single DNA molecule.
For more details of our SiO2 (quartz) plasma etching capabilities, please visit the process data page below.
SiO2 Plasma Etching Process (RIE and ICP Etch)
Scientific Paper on Organic Rectifying Diode Fabrication Using Gold Plasma Treatment by University of Tokyo
A Mechanically Durable and Flexible Organic Rectifying Diode with a Polyethylenimine Ethoxylated Cathode
Naoji Matsuhisa, Hiroaki Sakamoto, Tomoyuki Yokota, Peter Zalar, Amir Reuveny, Sunghoon Lee and Takao Someya
Electrical and Electronic Engineering and Information Systems, University of Tokyo
7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
Advanced Electronic Materials Volume 2, Issue 10, October 2016
Flexible organic diode device fabrication is performed using Samco process equipment. Samco plasma cleaner PC-300 was used for wettability improvement of polyethylenimine ethoxylated (PEIE) surfaces and for work function improvement of gold (Au) electrode.
Someya lab, University of Tokyo is one of Samco plasma cleaner customers. Our plasma cleaner is used for organic transistor fabrication, and they have published several papers on cutting-edge flexible MEMS devices.
Go to Someya lab website.
Samco plasma cleaners are versatile tools for plasma treatment and cleaning of various materials. For metal surface cleaning, gold plasma treatment is one of the common surface cleaning technique before device packaging. Not only gold but also various metal materials can be processed including aluminum, silver & titanium. We have a special process technique to reduce corrosion risk of metal surfaces caused by plasma cleaning process. Furthermore, multiple shelves inside process chamber enable batch processing of several samples in one time. For more spec details of the plasma cleaners, please visit the product page below.
Jiangwei Liu 1, Hirotaka Ohsato 2, Xi Wang 1, Meiyong Liao 3 & Yasuo Koide 4
1 International Center for Young Scientists, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
2 Nanofabrication Platform, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan.
3 Optical and Electronic Materials Unit, NIMS, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
4 Research Network and Facility Services Division, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki, 305-0047, Japan.
Scientific Reports 6, Article number: 34757 (2016)
Diamond is considered to be a material for next-generation power semiconductor devices due to high thermal conductivity and breakdown voltage. In this research, triple-gate metal-oxide-semiconductor field-effect transistor (MOSFET) device was fabricated using a hydrogenated diamond (H-diamond) substrate. In device fabrication, Samco open-load Reactive Ion Etching (RIE) system at National Institute for Materials Science (NIMS) was used for diamond plasma etching to form a diamond mesa structure.
For our process capabilities of diamond plasma etching, please visit the process data page below.
Diamond Plasma Etching Process Data (RIE Etching & ICP Etching)
Also, for more information on process equipment which are suitable for diamond plasma etching, please visit the product page below,
Reactive Ion Etching (RIE) Systems
ICP Etching Systems