Heterogeneously integrated laser-induced fluorescence detection devices: Integration of an excitation source

Toshihiro Kamei, Keiko Sumitomo, Sachiko Ito, Ryo Takigawa, Noriyuki Tsujimura, Hisayuki Kato, Takeshi Kobayashi and Ryutaro Maeda
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8564, Japan
Japanese Journal of Applied Physics (2014) 53, 06JL02

P-doped, undoped and B-doped a-Si:H film deposition were performed using SAMCO PECVD System for microfluidic device fabrication.

Nanometer-Scale Vertical-Sidewall Reactive Ion Etching of InGaAs for 3-D III-V MOSFETs

Xin Zhao and Jesús A. del Alamo
Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA 02139 USA
IEEE ELECTRON DEVICE LETTERS (2014) 35, 5

Samco ICP etch system was used for fabrication of InGaAs nanowires. The nanowires showed vertical and smooth sidewalls by optimization of the etch recipe.
Massachusetts Institute of Technology (MIT) is one of the proprietary customers of Samco plasma etching systems. They use our process equipment for plasma etching of III-V materials such as GaN, GaAs and InGaAs in various device projects.

For our process capabilities of GaAs plasma etching, please visit the page below.
GaAs Dry Etching Process (ICP-RIE)

Field isolation for GaN MOSFETs on AlGaN/GaN heterostructure with boron ion implantation

Y Jiang^1,2, Q P Wang^1,2, K Tamai², L A Li², S Shinkai³, T Miyashita⁴, S-I Motoyama⁴, D J Wang^1,5, J-P Ao^2,5 and Y Ohno^2,6
1 School of Electronic Science and Technology, Dalian University of Technology, Dalian, Liaoning 116024, People’s Republic of China
² Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
³ Center for microelectronic system, Kyushu Institute of Technology, Fukuoka 820-8502, Japan
⁴ Research and Development Department, SAMCO Inc., Kyoto 612-8443, Japan
⁵ Author to whom any correspondence should be addressed.
⁶ Present address: e-Device, Inc., Sapporo 063-0801, Japan.
Semicond. Sci. Technol. (2014) 29 055002

Samco PECVD system was used for gate oxide formation in GaN power device fabrication. This paper is collaboration work of Dalian University of Technology, The University of Tokushima, Kyushu Institute of Technology and Samco.

For our process solutions of GaN power device fabrication, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication

A Widely Tunable Narrow Linewidth RF Source Integrated in a Heterogeneous Photonic Module

David W. Grund, Garrett A. Ejzak, Garrett J. Schneider, Janusz Murakowski and Dennis W. Prather
Dept. of Electr. & Comput. Eng., Univ. of Delaware, Newark, DE, USA
Journal of Lightwave Technology (2014) 32, 7, pp. 1363-1369

SAMCO ICP Etch System was used for silicon plasma etching in silicon-photonic integrated circuit fabrication.
For more details of our silicon plasma etching capabilities, please visit the page below.
Si Dry Etching Process (RIE, ICP-RIE or XeF₂ Etch)

Inductively coupled plasma reactive ion etching of GaAs wafer pieces with enhanced device yield

Michael K. Connors, Leo J. Missaggia, William S. Spencer and George W. Turner
Lincoln Laboratory, Massachusetts Institute of Technology, 244 Wood Street, Lexington, Massachusetts 02420
J. Vac. Sci. Technol. B 32, 021207 (2014)

SAMCO ICP Etching System, RIE-200iP was used for process investigation of GaAs plasma etching.

For more details of our GaAs plasma etching technologies, please visit the page below.
GaAs Dry Etching Process (ICP-RIE)

The improved piezoelectric properties of ZnO nanorods with oxygen plasma treatment on the single layer graphene coated polymer substrate

Mushtaque Hussain, Mazhar Ali Abbasi, Zafar Hussain Ibupoto, Omer Nur and Magnus Willander
Physical Electronic & Nanotechnology division, Department of Science &Technology, Campus Norrköping, Linköping University, SE-60174 Norrköping, Sweden.
physica status solidi (a) Volume 211, Issue 2, pages 455–459, February 2014

ZnO nanorods were treated with an oxygen plasma using SAMCO Plasma Etching System (RIE etcher) to reduce the defect levels.

High-temperature, continuous-wave operation of terahertz quantum-cascade lasers with metal-metal waveguides and third-order distributed feedback

M. Wienold, B. Röben, L. Schrottke, R. Sharma, A. Tahraoui, K. Biermann and H. T. Grahn
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5–7, 10117 Berlin, Germany
Opt Express. (2014) 22 (3):3334-48
SAMCO ICP Etch System is used for fabrication of GaAs/AlGaAs terahertz quantum-cascade lasers (THz QCLs).

For more details of our GaAs dry etch capabilities, please visit the page below.
GaAs Dry Etching Process (ICP-RIE)

High-aspect-ratio nanoimprinted structures for a multi-pole magnetic scale

Zhi-Hao Xu¹, Chien-Li¹, Cheng-Kuo¹, Sheng-Ching³ and Tsung-Shune Chin^2
1 Department of Power Mechanical Engineering, National Tsing Hua University, Hsinchu 30013, TAIWAN
² Department of Materials Science & Engineering, Feng Chia University, Taichung 40724, TAIWAN
³ Department of Mechanical Engineering, National United University, Miaoli 36003, TAIWAN
Microsystem Technologies (2014) 20, 10, pp 1949-1953

SAMCO Plasma Cleaner was used for photoresist stripping/trimming in high-aspect-ratio structure.

For more details of our photoresist stripping & removal process solutions, please visit the page below.
Plasma Ashing & Stripping of Photoresist

Metal-Containing Block Copolymer Thin Films Yield Wire Grid Polarizers with High Aspect Ratio

So Youn Kim ¹, Jessica Gwyther ², Ian Manners ², Paul M. Chaikin ³, and Richard A. Register ¹
1 Department of Chemical and Biological Engineering, Princeton University, Princeton, NJ, USA
2 School of Chemistry, University of Bristol, Bristol, United Kingdom
3 Department of Physics, New York University, New York, USA
Adv. Mater., 26, 791-795 (2014)

Samco Silicon DRIE System at Princeton University was used for deep silicon etching using the Bosch Process.

For more details of our deep silicon etching capabilities, please visit the page below.
Si DRIE (Deep Reactive Ion Etching) for MEMS and TSV
Silicon Deep Etching Using the Bosch Process

Enhancement of electrical conductivity and electrochemical activity of hydrogenated amorphous carbon by incorporating boron atoms

Hiroshi Naragino, Kohsuke Yoshinaga, Akira Nakahara, Sakuya Tanaka and Kensuke Honda
Graduate school of Science and Engineering, Yamaguchi University, 1677-1, Yoshida, Yamaguchi-shi, Yamaguchi 753-8512, Japan
Journal of Physics: Conference Series, 441, 2013 conference 1
Process and film properties of conductive boron-doped hydrogenated amorphous carbon (B-DLC) thin films was studied in this research. Samco PECVD system at Yamaguchi University was used for DLC film deposition.

Samco offers PECVD systems and process technology for deposition of various types of films such as SiO₂, SiN_x, TiO₂, amorphous carbon (a-Si), SiON, SiCN and DLC.
For more details of our system lineup, please visit the product pages below.
Anode PECVD Systems for High-quality Film Deposition
Cathode PECVD Systems for High-speed SiO₂ and SiN_x Film Deposition under 80 °C