Category: SiNx PECVD
Fabrication of SiNx Thin Film of Micro Dielectric Barrier Discharge Reactor for Maskless Nanoscale Etching
Qiang Li1, Jie Liu1, Yichuan Dai1, Wushu Xiang1, Man Zhang1, Hai Wang2 and Li Wen1
1 Department of Precision Machinery and Precision Instrumentation, University of Science and Technology of China, Hefei 230027, China
2 School of Mechanical and Automotive Engineering, Anhui Polytechnic University, Wuhu 241000, China
Micro dielectric barrier discharge (MDBD) devices have some potential interesting applications such as surface modification. Silicon Nitride (SiNx) film can be used as a dielectric barrier layer material in MDBD devices. However, there are challenges of crack and wrinkle formation due to mechanical stress of SiNx film in device fabrication. Samco plasma CVD system was used for SiNx film deposition. With optimization of deposition process recipe, compressive stress of SiNx film was mitigated to suppress crack formation.
For more details of our SiNx film deposition capabilities, please visit the process data page below.
SiNx PECVD Process
Planar Indium Tin Oxide Heater for Improved Thermal Distribution for Metal Oxide Micromachined Gas Sensors
M. Cihan Çakır1,2 ,Deniz Çalışkan1, Bayram Bütün1 and Ekmel Özbay1,3
1 Nanotechnology Research Center, Bilkent University, Ankara 06800, Turkey
2 Department of Nanotechnology and Nanomedicine, Hacettepe University, Ankara 06800, Turkey
3 Department of Electrical and Electronics Engineering, Department of Physics, Bilkent University, Ankara 06800, Turkey
Samco PECVD system at Bilkent University was used for Si3N4 film deposition to form an etch stop layer in Si wet etching. Furthermore, Samco ICP-RIE plasma etcher at Bilkent University was used for plasma etching of Si3N4 against Si etch mask for ITO gas sensor fabrication.
For more information on our Si3N4 PECVD process capabilities, please visit the process data page below.
Si3N4 PECVD Process Data
For more details of Samco PECVD systems and ICP-RIE systems, please visit product pages below.
Anode PECVD Systems for SiO2, Si3N4, a-Si, SiON, SiCN & DLC Deposition
Cathode PECVD Systems for High-speed SiO2 and Si3N4 Film Deposition
ICP-RIE Plasma Etcher for Si, SiO2, III-V & Metal Etching
Feng Qiu, Andrew M. Spring, and Shiyoshi Yokoyama*
Institute for Materials Chemistry and Engineering, Kyushu University, 6-1 Kasuga-koen Kasuga-city, Fukuoka, 816-8580, Japan
ACS Photonics (2015) 2, 3 pp 405–409
Samco PECVD system was used for Si3N4 deposition to fabricate a ring resonator.
For more details of our SiNx PECVD process capabilities, please visit the page below.
SiNx PECVD Process
Scientific Paper on a-Si:H and a-Si3N4 Film Properties from University of West Bohemia, Czech Republic
Transition from a-Si:H to Si3N4 in thin films deposited by PECVD technology from silane diluted with nitrogen
P. Šutta1, P. Calta1, J. Müllerová2, M. Netrvalová1, R. Medlín1, J. Savková1 and V. Vavruňková1
1 New Technologies – Research Centre, University of West Bohemia, Univerzitní 8, 306 14 Pilsen, Czech Republic
2 Institute of A. Stodola, Faculty of Electrical Engineering, University of Žilina, Kpt. J. Nálepku 1390, 031 01 Lipt. Mikuláš, Slovak Republic
Presented at 2014 10th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM)
Samco PECVD System was used for the deposition of a-SiN:H thin films and a-Si:H/a-Si3N4 multi-layered films.
For more details of our Si3N4 PECVD process capabilities, please visit the page below.
Si3N4 PECVD Process