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Search:
  • Products
    • Deposition Systems
      • Atomic Layer Deposition (ALD)
      • Anode PECVD
      • Cathode PECVD
    • Etching Systems
      • Atomic Layer Etching (ALE)
      • Inductively Coupled Plasma (ICP) Etching
      • Si Deep Reactive Ion Etching (DRIE)
      • Reactive Ion Etching (RIE) – Plasma Etching
      • Xenon Difluoride (XeF2) Etching
    • Surface Treatment Systems
      • Aqua Plasma®
      • Plasma Cleaning
      • UV Ozone Cleaning
  • Processes
    • Deposition
      • Atomic Layer Deposition (ALD)
      • Anode PECVD
      • Cathode PECVD
    • Etching
      • Atomic Layer Etching (ALE)
      • Compound Semiconductor Etching
        • GaN Etching
        • GaAs Etching
        • InP Etching
      • Silicon Etching & DRIE
      • Metal/Dielectric Etching
      • Failure Analysis
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      • Aqua Plasma®
      • Plasma Cleaning
      • UV Ozone Cleaning
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Yearly Archives: 2024

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  2. 2024

UV-Ozone Cleaning: Fundamentals, Advantages, and Applications

TutorialsBy MeganDecember 15, 2024

Learn how UV-ozone cleaning works, its advantages over plasma cleaning, and applications in semiconductor surface preparation and materials research.

Part 4 – Loading Effect and Microloading Effect in Silicon Deep Reactive Ion Etching

TutorialsBy MeganDecember 10, 2024

Explore loading and microloading effects in silicon DRIE and how process optimization improves etch uniformity and depth control in MEMS fabrication.

Surface Treatment of Gold Using Aqua Plasma®

Technical reportsBy MeganNovember 13, 2024

Aqua Plasma® treatment prevents oxidation, reduces gold surface oxides, and improves hydrophilicity for semiconductor manufacturing processes.

Part 3 – Equipment Advances for the Bosch Process

TutorialsBy MeganNovember 9, 2024

Learn key Bosch process hardware advances (including ICP source design, RF power control, fast gas switching, and pumping) to improve Si DRIE performance and profiles.

AlGaN/GaN Etch Challenges for GaN Power Device Fabrication

Technical reportsBy MeganNovember 8, 2024

Explore key etching challenges in AlGaN/GaN power device fabrication and solutions for precise plasma etching of GaN-based semiconductor structures.

Part 2 – What is the Bosch Process (Deep Reactive Ion Etching)?

TutorialsBy MeganOctober 9, 2024

Learn how the Bosch process enables deep silicon DRIE with high aspect ratio features, using cyclic deposition and etching steps for anisotropic profiles and high selectivity.

Long-Term Process Stability of “PD-220 Series” Systems

Technical reportsBy MeganSeptember 14, 2024

Long-term data shows stable SiN deposition using Samco’s PD-220 plasma CVD systems, maintaining ±2% uniformity over six months with reduced maintenance downtime.

ICFO: Dr. Johann Osmond

InterviewsBy MeganSeptember 12, 2024

Nanophotonics research, advanced applications, and the role of RIE-10NR in ICFO’s photonics projects.

Part 1 – Introduction to Si DRIE (Silicon Deep Reactive Ion Etching)

TutorialsBy MeganSeptember 6, 2024

An introduction to Si DRIE, comparing Bosch, non-Bosch, and cryogenic processes and how Samco systems support MEMS, TSV, and packaging applications.

Innovation with the New Plasma Source HSTC-M™

Technical reportsBy MeganJuly 28, 2024

Samco introduces the HSTC-M™ plasma source for uniform, stable ICP etching of SiC and GaN power devices up to 8-inch wafers across research and production systems.

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