Category: Si Etch
Scientific Paper on TiN on Si hybrid-plasmonic-photonic waveguide from Virginia Commonwealth University
A Platform for CMOS Compatible Plasmonics: High Plasmonic Quality Titanium Nitride Thin Films on Si (001) with an MgO Interlayer
Kai Ding 1, Dhruv Fomra 1, Alexander V. Kvit 2, Hadis Morkoç 1, Nathaniel Kinsey 1, Ümit Özgür 1 and Vitaliy Avrutin 1
1 Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia, 23284 USA
2 Materials Science Center, University of Wisconsin‐Madison, Madison, WI, 53706 USA
Advanced Photonics Research, 2000210 (2021)
A CMOS compatible hybrid-plasmonic-photonic waveguide was fabricated using TiN layer deposited by PEALD on Si (001) substrate with MgO interlayer. Samco ICP-RIE system RIE-101iPH was used for TiN/Au etching in chlorine chemistry and also Si etching in fluorine chemistry.
For more details of our ICP-RIE etch systems, please visit the product page below.
ICP-RIE Etch Systems
Celluloid Microenclosure and Microlens Array Fabricated by Suzukiʼs Universal Microprinting Method and XeF2 Vapor Etching for Microbial Analysis
Akihiro Matsutani1 and Ayako Takada2
1 Semiconductor and MEMS Processing Division, Technical Department, Tokyo Institute of Technology,
4259 Nagatsuta, Yokohama, Kanagawa 226-8503, Japan
2 Biomaterials Analysis Division, Technical Department, Tokyo Institute of Technology,
4259 Nagatsuta, Yokohama, Kanagawa 226-8501, Japan
Sensors and Materials, Vol. 30, No. 1 (2018) 149–155
A celluloid-based biochip for cell trapping is fabricated using Suzuki’s universal microprinting (SUMP) method. Samco tabletop Reactive Ion Etching (RIE) system was used for mold fabrication. Si layer was etched over photoresist and Cr mask in fluorine chemistry.
For more information on our RIE system lineup, please visit the product page below.
Yoshihiro Kawata, Kazuki Aoki, Yuhi Inada*, Takeshi Yamao, and Shu Hotta
Faculty of Materials Science and Engineering, Kyoto Institute of Technology, Kyoto 606-8585, Japan
Japanese Journal of Applied Physics 57, 03EH11 (2018)
In this paper, direct fabrication of gratings was performed on HMDS-treated SiO2/Si substrates. Samco plasma etching system at Kyoto Institute of Technology was used for plasma etching of SiO2/Si substrates for grating fabrication over an organic semiconducting oligomer 5,5AA-bis(4-biphenylyl)-2,2A:5A,2AA-terthiophene (BP3T). The system was also used for estimate of BP3T etch resistivity.
Low-power, low-pressure reactive-ion etching process for silicon etching with vertical and smooth walls for mechanobiology application
Mohammed Ashraf, Sree V. Sundararajan, Gianluca Grenci
National University of Singapore, Mechanobiology Institute, Singapore
J. Micro/Nanolith. MEMS MOEMS. 16(3), 034501 (Jul 10, 2017).
Silicon plasma etching was carried out using RIE etcher RIE-10NR. Low-power etching process was newly developed in fluorine chemistry to fabricate vertical smooth sidewalls.
National University of Singapore is one of Samco’s proud customers. As seen in this paper, Samco RIE etcher RIE-10NR shows process versatility with excellent profile control for university lab users. The system can offer a wide range of process window for etching of various materials (silicon, SiO2, SiNx, metals and polymer).
For more details of our process capabilities of silicon etching, please visit the process data page below.
Silicon Plasma Etching
Min Wang1,2, Yulian Zhang1, Linfeng Lu1, Dongdong Li1 and Xufei Zhu3
1 Shanghai Advanced Research Institute, Chinese Academy of Sciences, 99 Haike Road, Zhangjiang Hi-Tech Park, Pudong, Shanghai 201210, People’s Republic of China
2 University of Chinese Academy of Sciences, Beijing 100039, People’s Republic of China
3 School of Chemical Engineering, Nanjing University of Science and Technology, Nanjing 210094, People’s Republic of China
Mater. Res. Express (2017) 4 055005
Crystalline silicon nano-hole array was fabricated using UV nanoimprint (UV-NIL) technology for potential silicon solar cell applications. Samco RIE ether, RIE-10NR was used in device fabrication for photoresist ashing and silicon plasma etching processes. Nano-hole array structures were successfully fabricated.
For more details of Samco RIE etcher lineup, please visit the product page below.
RIE Plasma Etcher
We provide several systems to meet each customer’s process requirements in plasma etching processes.
Low driving voltage Mach-Zehnder interference modulator constructed from an electro-optic polymer on ultra-thin silicon with a broadband operation
HIROMU SATO1, HIROKI MIURA1 FENG QIU2 ANDREW M. SPRING2, TSUBASA KASHINO3, TAKAMASA KIKUCHI3, MASAAKI OZAWA3, HIDEYUKI NAWATA3, KEISUKE ODOI3, SHIYOSHI YOKOYAMA1,2
1 Department of Molecular and Material Sciences, Kyushu University, 6-1 Kasuga-koen Kasuga-city, Fukuoka 816-8580, Japan
2 Institute for Materials Chemistry and Engineering, Kyushu University, 6-1 Kasuga-koen Kasuga-city, Fukuoka 816-8580, Japan
3 Nissan Chemical Industries LTD. 488-6 Suzumi-cho, Funabashi, Chiba 274-0052, Japan
Optics Express Vol. 25, Issue 2, pp. 768-775 (2017)
An electro-optic (EO) polymer waveguide using an ultra-thin silicon hybrid was fabricated. A 50 nm-thick silicon layer was deposited on SiO2 substrates using Samco plasma CVD system, PD-220NL. Then, the silicon layer was patterned as the Mach-Zehnder interferometer using Samco deep silicon plasma etching system, RIE-400iPB.
For more details of our silicon etching process capabilities, please visit the process data page below.
Silicon Plasma Etching Data
Scientific Paper on Anti-reflective Surface Fabrication by Si Plasma Etch from Yokohoma National University Team
Yoshiaki Nishijima1 Ryosuke Komatsu1 Shunsuke Ota1, Gediminas Seniutinas2 Armandas Balčytis2,3 and Saulius Juodkazis2
1 Department of Electrical and Computer Engineering, Graduate School of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-Ku, Yokohama 240-8501, Japan
2 Centre for Micro-Photonics, Faculty of Engineering and Industrial Sciences, Swinburne University of Technology, Hawthorn, VIC 3122, Australia
3 Institute of Physics, Center for Physical Sciences and Technology, 231 Savanoriu¸ Avenue, LT-02300 Vilnius, Lithuania
APL PHOTONICS 1, 076104 (2016)
Anti-reflective surfaces were created employing plasma etching technologies. Samco ICP-RIE etcher was used for black silicon plasma etching (b-Si) to fabricate nanospike structures using fluorine chemistry.
For more process capabilities of our silicon plasma etching including the Bosch Process Etching, please visit the process data pages below.
Scientific Paper on Silicon Nanowire Fabrication for Biosensing Applications from Universiti Malaysia Perlis
Top-Down Nanofabrication and Characterization of 20 nm Silicon Nanowires for Biosensing Applications
M. Nuzaihan M. N 1, U. Hashim1,2, M. K. Md Arshad1,2, A. Rahim Ruslinda1, S.F.A. Rahman3, M. F. M. Fathil1, Mohd. H. Ismail2
1 Institute of Nano Electronic Engineering, Universiti Malaysia Perlis, 01000 Kangar, Perlis, Malaysia,
2 School of Microelectronic Engineering, Universiti Malaysia Perlis (UniMAP), 02600 Pauh, Perlis, Malaysia,
3 Chemistry Department, Faculty of Science, Universiti Putra Malaysia, 43400 UPM Serdang, Selangor, Malaysia
PLoS ONE 11(3): e0152318. doi:10.1371/journal.pone.0152318
Samco ICP etch system at Universiti Malaysia Perlis was used for anisotropic etching of silicon for silicon nanowires fabrication.
For our process examples of silicon dry etching, please visit the process data page below.
Si Dry Etching Process (RIE, ICP-RIE or XeF2 Etch)
Hiroki Ashibaa, Makoto Fujimakia, Koichi Awazuv, Torahiko Tanakab and Makoto Makishimab
a Electronics and Photonic Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
b Division of Biochemistry, Department of Biomedical Sciences, Nihon University School of Medicine, 30-1 Oyaguchi-kamicho, Itabashi, Tokyo 173-8610, Japan
Sensing and Bio-Sensing Research 2016 Volume 7, March 2016, Pages 121-126
Samco ICP etcher was used to fabricate a mold template of microfluidic chips by silicon plasma etching.
For our process capabilities of silicon plasma etching, please visit the process data page below.
Si Dry Etching Process (RIE, ICP-RIE or XeF2 Etch)
Scientific Paper on Microscale Patterning of Si Substrate from Institute of Physical and Chemical Research (RIKEN)
Direct Growth and Controlled Coalescence of Thick AlN Template on Micro-circle Patterned Si Substrate
Binh Tinh Tran, Hideki Hirayama, Noritoshi Maeda, Masafumi Jo, Shiro Toyoda and Norihiko Kamata
Quantum Optodevice Laboratory, Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
Sci Rep. (2015) 5 14734.
For more details of our SiO2 PECVD & Si plasma etching capabilities, please visit the process data pages below.
SiO2 PECVD Process Data
Silicon Plasma Etching Process Data (RIE or ICP Etch)