Category: Si Etch
Scientific Paper on Microscale Patterning of Si Substrate from Institute of Physical and Chemical Research (RIKEN)
Direct Growth and Controlled Coalescence of Thick AlN Template on Micro-circle Patterned Si Substrate
Binh Tinh Tran, Hideki Hirayama, Noritoshi Maeda, Masafumi Jo, Shiro Toyoda and Norihiko Kamata
Quantum Optodevice Laboratory, Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
Sci Rep. (2015) 5 14734.
SiO2 film was deposited on Si substrate, using Samco PECVD system.
Then, Si was etched over SiO2 film, using Samco ICP etcher for microscale patterning.
For more details of our SiO2 PECVD & Si plasma etching capabilities, please visit the process data pages below.
SiO2 PECVD Process Data
Silicon Plasma Etching Process Data (RIE or ICP Etch)
Scientific Paper on Thin-film Edge Electrode Lithography Technologies from The University of Tokyo
Thin-film edge electrode lithography enabling low-cost collective transfer of nanopatterns
Yongfang Li1,2, Akihiro Goryu1, Kunhan Chen2, Hiroshi Toshiyoshi2 and Hiroyuki Fujita2
1 Corporate Research & Development Center, Toshiba Corporation, Kawasaki, JAPAN
2 The University of Tokyo, Tokyo, JAPAN
Presented at 2015 28th IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
Samco open-load RIE system was used for silicon dry etching over oxide to transfer the oxide pattern in new lithography process development.
For our process capabilities of silicon dry etching for device fabrication please visit the process data pages below.
Si Dry Etching Process (RIE, ICP-RIE or XeF2 Etch)
Deep Silicon Trench/Via Hole Etching using Bosch Process
Scientific Paper on Silicon Waveguide and THz Antenna Fabrication by Swinburne Univ. of Technology, Australia
High precision fabrication of antennas and sensors
A. Balcytis1,2,3, G. Seniutinas1,2, D. Urbonas1,3, M. Gabalis3 K. Vaskevicius3, R. Petruskevicius3, G. Molis4, G. Valusis5 and S. Juodkazis1,2
1 Centre for Micro-Photonics and Industrial Research Institute Swinburne, Faculty of Engineering and Industrial Sciences, Swinburne University of Technology, Hawthorn, VIC 3122, Australia
2 Melbourne Centre for Nanofabrication, 151 Wellington Road, Clayton, VIC 3168, Australia
3 Institute of Physics, Center for Physical Sciences and Technology, 231 Savanoriu Avenue, LT-02300 Vilnius, Lithuania
4 Teravil Ltd, Vilnius, LT 01108, Lithuania
5 Semiconductor Physics Institute, Center for Physical Science and Technology, 11 A. Gostauto st., LT01108 Vilnius, Lithuania
Proc. SPIE 9446, Ninth International Symposium on Precision Engineering Measurement and Instrumentation, 94461G (March 6, 2015); doi:10.1117/12.2180814
SOI waveguide was fabricated using Samco ICP etch system for plasma etching of silicon against Cr mask.
For our process examples of silicon plasma etching, please visit the page below.
Si Dry Etching Process (RIE, ICP-RIE or XeF2 Etch)
Scientific Paper on Silicon Photonic Circuit Fabrication from University of Delaware
Packaging and design of a heterogeneous dual laser chip for a widely tunable spectrally pure optical RF source
David W. Grund Jr., Garrett J. Schneider, Janusz Murakowski, and Dennis W. Prather
Electrical and Computer Engineering, University of Delaware, Newark, Delaware, USA
Optics Express (2014) 22, 17, pp. 19838-19849
Samco ICP Etch System was used for silicon fine etching.
Then, Samco PECVD System was used for SiO2 layer deposition to isolate a metal heater from the etched silicon layer.
For details of SiO2 PECVD process capabilities, please visit the page below.
SiO2 PECVD Process
Scientific Paper on Silicon Photonic Device Fabrication Using Silicon Plasama Etching by University of Delaware
A Widely Tunable Narrow Linewidth RF Source Integrated in a Heterogeneous Photonic Module
David W. Grund, Garrett A. Ejzak, Garrett J. Schneider, Janusz Murakowski and Dennis W. Prather
Dept. of Electr. & Comput. Eng., Univ. of Delaware, Newark, DE, USA
Journal of Lightwave Technology (2014) 32, 7, pp. 1363-1369
SAMCO ICP Etch System was used for silicon plasma etching in silicon-photonic integrated circuit fabrication.
For more details of our silicon plasma etching capabilities, please visit the page below.
Si Dry Etching Process (RIE, ICP-RIE or XeF2 Etch)
Scientific Paper on Nano-pillar Array Formation Using Silicon Plasma Etching by National Taiwan University
Periodic Si nanopillar arrays by anodic aluminum oxide template and catalytic etching for broadband and omnidirectional light harvesting
Hsin-Ping Wang1, Kun-Tong Tsai1,2, Kun-Yu Lai1, Tzu-Chiao Wei1, Yuh-Lin Wang2 and Jr-Hau He1
1Institute of Photonics and Optoelectronics, & Department of Electrical Engineering, National Taiwan University,
Taipei 10617, Taiwan
2Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, Taiwan
Optics Express (2012) 20,S1, pp. A94-A103
Samco RIE etcher was used for silicon nanopillar fabrication by silicon plasma etching against anodic aluminum oxide (AAO) mask.
For more information on our silicon plasma etching process capabilities including the Bosch Process etching, please visit the process data pages below.
Silicon Plasma Etching (RIE or ICP Etch)
Silicon Deep Etching Using the Bosch Process
For more detail specs of our RIE etch equipment, please visit the product page below.
RIE Plasma Etcher
Scientific Paper on Miniature Fuel Cell Fabrication from Tokyo University of Science
Miniature Fuel Cell with Monolithically Fabricated Si Electrodes-Reduction of Pt Usage by Pd-Pt Catalyst
Takayuki Honjo, Taku Matsuzaka and Masanori Hayase
Tokyo University of Science, Noda, Chiba, Japan
Presented at Power MEMS 2010, Nov 30-Dec 3, Leuven, Belgium
Samco RIE Etcher was used for silicon plasma etching over Cu mask in fuel channel fabrication of miniature fuel cells.
For more details of our silicon etching technologies, please visit the process data pages below.
Si Dry Etching Process (RIE, ICP-RIE or XeF2 Etch)
Deep Silicon Trench/Via Hole Etching using Bosch Process