Category: Silicon/Dielectrics PECVD
Magnesium Oxide (MgO) pHsensitive Sensing Membrane in Electrolyte-Insulator Semiconductor Structures with CF4 Plasma Treatment
Chyuan-Haur Kao1,3,4, Chia Lung Chang1, Wei Ming Su2, Yu Tzu Chen2, Chien Cheng Lu2,
Yu Shan Lee2, Chen Hao Hong2, Chan-Yu Lin4 & Hsiang Chen2
1 Department of Electronic Engineering, Chang Gung University, Taoyuan, 333, Taiwan, ROC.
2 Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, Puli, 545, Taiwan, ROC.
3 Kidney Research Center, Department of Nephrology, Chang Gung Memorial Hospital, Chang Gung University, College of Medicine, Taoyuan, Taiwan, ROC.
4 Department of Electronic Engineering, Ming Chi University of Technology, New Taipei City,
Scientific Reports (2017) 7 7185 DOI:10.1038/s41598-017-07699-3
In this paper, MgO (Magnesium Oxide) based biosensors were fabricated for chemical solution sensing with high pH sensitivity. CF4 plasma treatment was carried out to shape nanostructures and stabilize the material properties of the MgO membrane. For the CF4 plasma treatment of MgO films and deposition of silicon based films, Samco PECVD system PD-220N was used.
Samco offers PECVD systems for plasma deposition of SiO2, SiNx, a-Si, DLC and etc. These films are used for passivation, barrier film and other purposes in various research fields. For more details of our process capabilities of plasma deposition technologies, please visit the process data pages below.
SiO2 PECVD Process Data
SiNx PECVD Process Data
Run-to-Run Yield Evaluation of Improved Nb 9-layer
Advanced Process using Single Flux Quantum Shift Register
Chip with 68,990 Josephson Junctions
Shuichi Nagasawa and Mutsuo Hidaka
National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1
Umezono, Tsukuba 305-8568, Japan
IOP Conf. Series: Journal of Physics: Conf. Series 871 (2017) 012065
Sputter SiO2 deposition process has a challenge in reproducibility in device fabrication.
In this paper, as an alternative of the sputter deposition method, PECVD deposition method was developed in combination with Ar ion milling. Samco PECVD system, PD-270STL at AIST was used for SiO2 insulation layer deposition. With effective chamber conditioning, SiO2 insulation with less particles was achieved with an excellent run-to-run reproducibility.
This research was presented at 29th International Symposium on Superconductivity.
For more details of our SiO2 PECVD process capabilities,
please visit the process data page below.
SiO2 PECVD Data
Effects of epitaxial growth on the optimum condition of intrinsic amorphous silicon oxide buffer layers for silicon heterojunction solar cells
He Zhanga, Kazuyoshi Nakadab, Makoto Konagaia, c
a MEXT/FUTURE-PV Innovation Research, Japan Science and Technology Agency (JST), 2-2-9 Machiike-dai, Koriyama, Fukushima 963-0298, Japan
b Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1-NE-15 Ookayama, Meguro-ku, Tokyo 152-8552, Japan
c Advanced Research Laboratories, Tokyo City University, 8-15-1, Todoroki, Setagaya-ku, Tokyo 158-0082, Japan
Thin Solid Films (2017) 628 pp 214–220
Samco PECVD tool PD-2203L was used for deposition of amorphous silicon oxide buffer layer for silicon solar cell application. Excellent film properties of surface passivation were achieved. For more details of our PECVD lineup and capabilities, please visit the product pages below.
High Responsivity MgZnO Ultraviolet Thin-Film Phototransistor Developed Using Radio Frequency Sputtering
Jyun-Yi Li, Sheng-Po Chang *, Ming-Hung Hsu and Shoou-Jinn Chang
Department of Electrical Engineering and Advanced Optoelectronic Technology Center, Institute of Microelectronics, National Cheng Kung University, Tainan 701, Taiwan
Materials 2017, 10(2), 126
Ultraviolet phototransistors were fabricated using Mg-doped ZnO film to achieve high mobility, a fast on–off transition, and high responsivity under deep UV illumination. Samco PECVD equipment PD-220NA was used for 200 nm thick SiO2 film deposition as a dielectric layer.
Samco offers high-speed SiO2 and SiNx film deposition technologies for various device applications. Also, we provide low-temperature PECVD (under 80°C) for device fabrication using heat-sensitive materials.
For more details of the plasma deposition process capabilities, please visit the process solution page below.
High-speed SiO2 and SiNx Deposition
Low-temperature SiO2 and SiNx PECVD Process
Fabrication of SiNx Thin Film of Micro Dielectric Barrier Discharge Reactor for Maskless Nanoscale Etching
Qiang Li1, Jie Liu1, Yichuan Dai1, Wushu Xiang1, Man Zhang1, Hai Wang2 and Li Wen1
1 Department of Precision Machinery and Precision Instrumentation, University of Science and Technology of China, Hefei 230027, China
2 School of Mechanical and Automotive Engineering, Anhui Polytechnic University, Wuhu 241000, China
Micro dielectric barrier discharge (MDBD) devices have some potential interesting applications such as surface modification. Silicon Nitride (SiNx) film can be used as a dielectric barrier layer material in MDBD devices. However, there are challenges of crack and wrinkle formation due to mechanical stress of SiNx film in device fabrication. Samco plasma CVD system was used for SiNx film deposition. With optimization of deposition process recipe, compressive stress of SiNx film was mitigated to suppress crack formation.
For more details of our SiNx film deposition capabilities, please visit the process data page below.
SiNx PECVD Process
Planar Indium Tin Oxide Heater for Improved Thermal Distribution for Metal Oxide Micromachined Gas Sensors
M. Cihan Çakır1,2 ,Deniz Çalışkan1, Bayram Bütün1 and Ekmel Özbay1,3
1 Nanotechnology Research Center, Bilkent University, Ankara 06800, Turkey
2 Department of Nanotechnology and Nanomedicine, Hacettepe University, Ankara 06800, Turkey
3 Department of Electrical and Electronics Engineering, Department of Physics, Bilkent University, Ankara 06800, Turkey
Samco PECVD system at Bilkent University was used for Si3N4 film deposition to form an etch stop layer in Si wet etching. Furthermore, Samco ICP-RIE plasma etcher at Bilkent University was used for plasma etching of Si3N4 against Si etch mask for ITO gas sensor fabrication.
For more information on our Si3N4 PECVD process capabilities, please visit the process data page below.
Si3N4 PECVD Process Data
For more details of Samco PECVD systems and ICP-RIE systems, please visit product pages below.
Anode PECVD Systems for SiO2, Si3N4, a-Si, SiON, SiCN & DLC Deposition
Cathode PECVD Systems for High-speed SiO2 and Si3N4 Film Deposition
ICP-RIE Plasma Etcher for Si, SiO2, III-V & Metal Etching
Dielectric Coating Thermal Stabilization During GaAs-Based Laser Fabrication for Improved Device Yield
MICHAEL K. CONNORS1,3, JAMAL E. MILLSAPP2 and GEORGE W. TURNER1
1 Lincoln Laboratory, Massachusetts Institute of Technology, 244 Wood Street, Lexington, MA 02
2 Toho Technology Inc., Chicago, IL 60625, USA.
Journal of Electronic Materials (2016) pp 1-7
A 300-nm thick SiO2 film was deposited using Samco Cathode PECVD system, PD-200STP to insulate the exposed ridge sidewalls.
For more details on Samco’s low-temperature PECVD technologies and process capabilities, please visit our featured process solution page below.
Low-temperature PECVD for SiO2 & SiNx Deposition
Scientific Paper on Microscale Patterning of Si Substrate from Institute of Physical and Chemical Research (RIKEN)
Direct Growth and Controlled Coalescence of Thick AlN Template on Micro-circle Patterned Si Substrate
Binh Tinh Tran, Hideki Hirayama, Noritoshi Maeda, Masafumi Jo, Shiro Toyoda and Norihiko Kamata
Quantum Optodevice Laboratory, Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
Sci Rep. (2015) 5 14734.
For more details of our SiO2 PECVD & Si plasma etching capabilities, please visit the process data pages below.
SiO2 PECVD Process Data
Silicon Plasma Etching Process Data (RIE or ICP Etch)
Qingpeng Wang1,2, Ying Jiang1,2, Jiaqi Zhang1,2, Kazuya Kawaharada1, Liuan Li1, Dejun Wang2 and Jin-Ping Ao1
1 Institute of Technology and Science, the University of Tokushima, Tokushima 770-8506, Japan
2 School of Electronic Science and Technology, Dalian University of Technology, Dalian 116023, People’s Republic of China
Semicond. Sci. Technol. (2015) 30 075003
Samco PECVD system was used for gate oxide (SiO2) formation in GaN MOSFET fabrication.
For our process solutions of GaN power device fabrication, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication/
Also, SiO2 PECVD process data can be found in the page below.
SiO2 PECVD Process
Scientific Paper on Silicon Solar Cells from Japan Science and Technology and Tokyo Institute of Technology
High-performance a-Si1–xOx:H/c-Si heterojunction solar cells realized by the a-Si:H/a-Si1–xOx:H stack buffer layer
He Zhang1, Kazuyoshi Nakada2, Shinsuke Miyajima2 and Makoto Konagai1,2
Phys. Status Solidi RRL (2015) 9: 225–229.
1 MEXT/FUTURE-PV Innovation Research, Japan Science and Technology (JST), Koriyama, Fukushima, Japan
2 Department of Physical Electronics, Tokyo Institute of Technology, Meguro-ku, Tokyo, Japan
Samco PECVD system was used for silicon thin film deposition in solar cell fabrication.