Category: Silicon/Dielectrics PECVD

27 Mar

Scientific paper on amorphous silicon oxide film deposition by Tokyo City University

SAMCO 2017 Customer, a-Si PECVD, SAMCO Customer Publication, Silicon/Dielectrics PECVD

Effects of epitaxial growth on the optimum condition of intrinsic amorphous silicon oxide buffer layers for silicon heterojunction solar cells

He Zhanga, Kazuyoshi Nakadab, Makoto Konagaia, c
a MEXT/FUTURE-PV Innovation Research, Japan Science and Technology Agency (JST), 2-2-9 Machiike-dai, Koriyama, Fukushima 963-0298, Japan
b Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1-NE-15 Ookayama, Meguro-ku, Tokyo 152-8552, Japan
c Advanced Research Laboratories, Tokyo City University, 8-15-1, Todoroki, Setagaya-ku, Tokyo 158-0082, Japan

Thin Solid Films (2017) 628 pp 214–220

Samco PECVD tool PD-2203L was used for deposition of amorphous silicon oxide buffer layer for silicon solar cell application. Excellent film properties of surface passivation were achieved. For more details of our PECVD lineup and capabilities, please visit the product pages below.

Anode PECVD Systems for High Quality Film Deposition of SiO2, SiNx and aSi
Cathode PECVD Systems for High-speed SiO2 and SiNx Deposition

25 Feb

Scientific paper on phototransistor fabrication using PECVD SiO2 by National Cheng Kung University

SAMCO 2017 Customer, SAMCO Customer Publication, Silicon/Dielectrics PECVD, SiO2 PECVD

High Responsivity MgZnO Ultraviolet Thin-Film Phototransistor Developed Using Radio Frequency Sputtering

Jyun-Yi Li, Sheng-Po Chang *, Ming-Hung Hsu and Shoou-Jinn Chang
Department of Electrical Engineering and Advanced Optoelectronic Technology Center, Institute of Microelectronics, National Cheng Kung University, Tainan 701, Taiwan
Materials 2017, 10(2), 126

Ultraviolet phototransistors were fabricated using Mg-doped ZnO film to achieve high mobility, a fast on–off transition, and high responsivity under deep UV illumination. Samco PECVD equipment PD-220NA was used for 200 nm thick SiO2 film deposition as a dielectric layer.

Samco offers high-speed SiO2 and SiNx film deposition technologies for various device applications. Also, we provide low-temperature PECVD (under 80°C) for device fabrication using heat-sensitive materials.
For more details of the plasma deposition process capabilities, please visit the process solution page below.
High-speed SiO2 and SiNx Deposition
Low-temperature SiO2 and SiNx PECVD Process

20 Dec

Scientific Paper on SiNx Plasma CVD Without Crack by University of Science and Technology of China

SAMCO 2016 Customer, SAMCO Customer Publication, Silicon/Dielectrics PECVD, SiNx PECVD

Fabrication of SiNx Thin Film of Micro Dielectric Barrier Discharge Reactor for Maskless Nanoscale Etching

Qiang Li1, Jie Liu1, Yichuan Dai1, Wushu Xiang1, Man Zhang1, Hai Wang2 and Li Wen1
1 Department of Precision Machinery and Precision Instrumentation, University of Science and Technology of China, Hefei 230027, China
2 School of Mechanical and Automotive Engineering, Anhui Polytechnic University, Wuhu 241000, China

Micro dielectric barrier discharge (MDBD) devices have some potential interesting applications such as surface modification. Silicon Nitride (SiNx) film can be used as a dielectric barrier layer material in MDBD devices. However, there are challenges of crack and wrinkle formation due to mechanical stress of SiNx film in device fabrication. Samco plasma CVD system was used for SiNx film deposition. With optimization of deposition process recipe, compressive stress of SiNx film was mitigated to suppress crack formation.

For more details of our SiNx film deposition capabilities, please visit the process data page below.
SiNx PECVD Process

22 Oct

Scientific Paper on ITO Gas Sensor Fabrication from Bilkent University, Turkey

SAMCO 2016 Customer, MEMS, SAMCO Customer Publication, Silicon/Dielectrics Etch, Silicon/Dielectrics PECVD, SiNx Etch, SiNx PECVD

Planar Indium Tin Oxide Heater for Improved Thermal Distribution for Metal Oxide Micromachined Gas Sensors

M. Cihan Çakır1,2 ,Deniz Çalışkan1, Bayram Bütün1 and Ekmel Özbay1,3
1 Nanotechnology Research Center, Bilkent University, Ankara 06800, Turkey
2 Department of Nanotechnology and Nanomedicine, Hacettepe University, Ankara 06800, Turkey
3 Department of Electrical and Electronics Engineering, Department of Physics, Bilkent University, Ankara 06800, Turkey

Samco PECVD system at Bilkent University was used for Si3N4 film deposition to form an etch stop layer in Si wet etching. Furthermore, Samco ICP-RIE plasma etcher at Bilkent University was used for plasma etching of Si3N4 against Si etch mask for ITO gas sensor fabrication.

For more information on our Si3N4 PECVD process capabilities, please visit the process data page below.
Si3N4 PECVD Process Data

For more details of Samco PECVD systems and ICP-RIE systems, please visit product pages below.
Anode PECVD Systems for SiO2, Si3N4, a-Si, SiON, SiCN & DLC Deposition
Cathode PECVD Systems for High-speed SiO2 and Si3N4 Film Deposition
ICP-RIE Plasma Etcher for Si, SiO2, III-V & Metal Etching

20 Mar

Scientific Paper on Low-temperature PECVD SiO2 Film by MIT Lincoln Laboratory

SAMCO 2016 Customer, SAMCO Customer Publication, Silicon/Dielectrics PECVD, SiO2 PECVD

Dielectric Coating Thermal Stabilization During GaAs-Based Laser Fabrication for Improved Device Yield

MICHAEL K. CONNORS1,3, JAMAL E. MILLSAPP2 and GEORGE W. TURNER1
1 Lincoln Laboratory, Massachusetts Institute of Technology, 244 Wood Street, Lexington, MA 02
420, USA.
2 Toho Technology Inc., Chicago, IL 60625, USA.
Journal of Electronic Materials (2016) pp 1-7

A 300-nm thick SiO2 film was deposited using Samco Cathode PECVD system, PD-200STP to insulate the exposed ridge sidewalls.

For more details on Samco’s low-temperature PECVD technologies and process capabilities, please visit our featured process solution page below.
Low-temperature PECVD for SiO2 & SiNx Deposition

20 Nov

Scientific Paper on Microscale Patterning of Si Substrate from Institute of Physical and Chemical Research (RIKEN)

SAMCO 2015 Customer, SAMCO Customer Publication, Si Etch, Silicon/Dielectrics Etch, Silicon/Dielectrics PECVD, SiO2 PECVD

Direct Growth and Controlled Coalescence of Thick AlN Template on Micro-circle Patterned Si Substrate

Binh Tinh Tran, Hideki Hirayama, Noritoshi Maeda, Masafumi Jo, Shiro Toyoda and Norihiko Kamata
Quantum Optodevice Laboratory, Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
Sci Rep. (2015) 5 14734.

SiO2 film was deposited on Si substrate, using Samco PECVD system.
Then, Si was etched over SiO2 film, using Samco ICP etcher for microscale patterning.

For more details of our SiO2 PECVD & Si plasma etching capabilities, please visit the process data pages below.
SiO2 PECVD Process Data
Silicon Plasma Etching Process Data (RIE or ICP Etch)

15 Jul

Scientific Paper on GaN MOSFET Fabrication Using SiO2 PECVD by University of Tokushima

SAMCO 2015 Customer, Power Devices, SAMCO Customer Publication, Silicon/Dielectrics PECVD, SiO2 PECVD

A self-aligned gate GaN MOSFET using an ICP-assisted low-temperature Ohmic process

Qingpeng Wang1,2, Ying Jiang1,2, Jiaqi Zhang1,2, Kazuya Kawaharada1, Liuan Li1, Dejun Wang2 and Jin-Ping Ao1
1 Institute of Technology and Science, the University of Tokushima, Tokushima 770-8506, Japan
2 School of Electronic Science and Technology, Dalian University of Technology, Dalian 116023, People’s Republic of China
Semicond. Sci. Technol. (2015) 30 075003

Samco PECVD system was used for gate oxide (SiO2) formation in GaN MOSFET fabrication.SiO2 Periodic Table

For our process solutions of GaN power device fabrication, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication/

Also, SiO2 PECVD process data can be found in the page below.
SiO2 PECVD Process

15 Jun

Scientific Paper on Silicon Solar Cells from Japan Science and Technology and Tokyo Institute of Technology

SAMCO 2015 Customer, a-Si PECVD, SAMCO Customer Publication, Silicon/Dielectrics PECVD, Solar Cell

High-performance a-Si1–xOx:H/c-Si heterojunction solar cells realized by the a-Si:H/a-Si1–xOx:H stack buffer layer

He Zhang1, Kazuyoshi Nakada2, Shinsuke Miyajima2 and Makoto Konagai1,2
Phys. Status Solidi RRL (2015) 9: 225–229.
1 MEXT/FUTURE-PV Innovation Research, Japan Science and Technology (JST), Koriyama, Fukushima, Japan
2 Department of Physical Electronics, Tokyo Institute of Technology, Meguro-ku, Tokyo, Japan

Samco PECVD system was used for silicon thin film deposition in solar cell fabrication.

01 Jun

Scientific Paper on GaN MOSFET Fabrication Using SiO2 PECVD by University of Tokushima

SAMCO 2015 Customer, Power Devices, SAMCO Customer Publication, Silicon/Dielectrics PECVD, SiO2 PECVD

Effects of recess process and surface treatment on the threshold voltage of GaN MOSFETs fabricated on a AlGaN/GaN heterostructure

Qingpeng Wang1,2, Ying Jiang1,2, Jiaqi Zhang1,2, Kazuya Kawaharada1, Liuan Li1, Dejun Wang2 and Jin-Ping Ao1
1 Institute of Technology and Science, University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
2 School of Electronic Science and Technology, Dalian University of Technology, 2 Linggong Road, Ganjingzi District, Dalian 116024, People’s Republic of China
Semicond. Sci. Technol. (2015) 30 065004

Samco PECVD System was used for gate oxide formation in AlGaN/GaN MOSFET fabrication.

SiO2 Periodic Table
For our process capabilities of GaN power device fabrication, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication

For more information on our SiO2 PECVD process capabilities, please visit the process data page below.
SiO2 PECVD Process Data

15 May

Scientific Paper on Si-containing Film from Indian Institute of Technology Delhi Group

SAMCO 2015 Customer, a-Si PECVD, SAMCO Customer Publication, Silicon/Dielectrics PECVD

Swift heavy ion irradiation induced microstructural modification and evolution of photoluminescence from Si rich a-SiNx:H

R K Bommali1, S Ghosh1, G Vijaya Prakash1, D Kanjilal2, P Mondal3, A K Srivastava3 and P Srivastava1
1 Nanostech and Nanophotonics Laboratories, Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110 016, India
2 Materials Science Division, Inter-University Accelerator Centre (IUAC), Aruna Asaf Ali Marg, New Delhi 110067, India
3 Indus Synchrotron Utilisation Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013, India
Mater. Res. Express (2015) 2 046204

SAMCO PECVD system was used for silicon film deposition.

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