Category: SiO2 PECVD

06 Aug

Scientific paper on PECVD SiO2 insulation deposition by AIST

Samco 2017 Customer, SAMCO Customer Publication, Silicon/Dielectrics PECVD, SiO2 PECVD

Run-to-Run Yield Evaluation of Improved Nb 9-layer
Advanced Process using Single Flux Quantum Shift Register
Chip with 68,990 Josephson Junctions

Shuichi Nagasawa and Mutsuo Hidaka
National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1
Umezono, Tsukuba 305-8568, Japan
IOP Conf. Series: Journal of Physics: Conf. Series 871 (2017) 012065

Sputter SiO2 deposition process has a challenge in reproducibility in device fabrication.
In this paper, as an alternative of the sputter deposition method, PECVD deposition method was developed in combination with Ar ion milling. Samco PECVD system, PD-270STL at AIST was used for SiO2 insulation layer deposition. With effective chamber conditioning, SiO2 insulation with less particles was achieved with an excellent run-to-run reproducibility.

This research was presented at 29th International Symposium on Superconductivity.

For more details of our SiO2 PECVD process capabilities,
please visit the process data page below.
SiO2 PECVD Data

PECVD System

25 Feb

Scientific paper on phototransistor fabrication using PECVD SiO2 by National Cheng Kung University

Samco 2017 Customer, SAMCO Customer Publication, Silicon/Dielectrics PECVD, SiO2 PECVD

High Responsivity MgZnO Ultraviolet Thin-Film Phototransistor Developed Using Radio Frequency Sputtering

Jyun-Yi Li, Sheng-Po Chang *, Ming-Hung Hsu and Shoou-Jinn Chang
Department of Electrical Engineering and Advanced Optoelectronic Technology Center, Institute of Microelectronics, National Cheng Kung University, Tainan 701, Taiwan
Materials 2017, 10(2), 126

Ultraviolet phototransistors were fabricated using Mg-doped ZnO film to achieve high mobility, a fast on–off transition, and high responsivity under deep UV illumination. Samco PECVD equipment PD-220NA was used for 200 nm thick SiO2 film deposition as a dielectric layer.

Samco offers high-speed SiO2 and SiNx film deposition technologies for various device applications. Also, we provide low-temperature PECVD (under 80°C) for device fabrication using heat-sensitive materials.
For more details of the plasma deposition process capabilities, please visit the process solution page below.
High-speed SiO2 and SiNx Deposition
Low-temperature SiO2 and SiNx PECVD Process

20 Mar

Scientific Paper on Low-temperature PECVD SiO2 Film by MIT Lincoln Laboratory

Samco 2016 Customer, SAMCO Customer Publication, Silicon/Dielectrics PECVD, SiO2 PECVD

Dielectric Coating Thermal Stabilization During GaAs-Based Laser Fabrication for Improved Device Yield

MICHAEL K. CONNORS1,3, JAMAL E. MILLSAPP2 and GEORGE W. TURNER1
1 Lincoln Laboratory, Massachusetts Institute of Technology, 244 Wood Street, Lexington, MA 02
420, USA.
2 Toho Technology Inc., Chicago, IL 60625, USA.
Journal of Electronic Materials (2016) pp 1-7

A 300-nm thick SiO2 film was deposited using Samco Cathode PECVD system, PD-200STP to insulate the exposed ridge sidewalls.

For more details on Samco’s low-temperature PECVD technologies and process capabilities, please visit our featured process solution page below.
Low-temperature PECVD for SiO2 & SiNx Deposition

20 Nov

Scientific Paper on Microscale Patterning of Si Substrate from Institute of Physical and Chemical Research (RIKEN)

Samco 2015 Customer, SAMCO Customer Publication, Si Etch, Silicon/Dielectrics Etch, Silicon/Dielectrics PECVD, SiO2 PECVD

Direct Growth and Controlled Coalescence of Thick AlN Template on Micro-circle Patterned Si Substrate

Binh Tinh Tran, Hideki Hirayama, Noritoshi Maeda, Masafumi Jo, Shiro Toyoda and Norihiko Kamata
Quantum Optodevice Laboratory, Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
Sci Rep. (2015) 5 14734.

SiO2 film was deposited on Si substrate, using Samco PECVD system.
Then, Si was etched over SiO2 film, using Samco ICP etcher for microscale patterning.

For more details of our SiO2 PECVD & Si plasma etching capabilities, please visit the process data pages below.
SiO2 PECVD Process Data
Silicon Plasma Etching Process Data (RIE or ICP Etch)

15 Jul

Scientific Paper on GaN MOSFET Fabrication Using SiO2 PECVD by University of Tokushima

Samco 2015 Customer, Power Devices, SAMCO Customer Publication, Silicon/Dielectrics PECVD, SiO2 PECVD

A self-aligned gate GaN MOSFET using an ICP-assisted low-temperature Ohmic process

Qingpeng Wang1,2, Ying Jiang1,2, Jiaqi Zhang1,2, Kazuya Kawaharada1, Liuan Li1, Dejun Wang2 and Jin-Ping Ao1
1 Institute of Technology and Science, the University of Tokushima, Tokushima 770-8506, Japan
2 School of Electronic Science and Technology, Dalian University of Technology, Dalian 116023, People’s Republic of China
Semicond. Sci. Technol. (2015) 30 075003

Samco PECVD system was used for gate oxide (SiO2) formation in GaN MOSFET fabrication.SiO2 Periodic Table

For our process solutions of GaN power device fabrication, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication/

Also, SiO2 PECVD process data can be found in the page below.
SiO2 PECVD Process

19 Oct

Scientific Paper on Silicon Photonic Circuit Fabrication from University of Delaware

Samco 2014 Customer, Photonic Devices, SAMCO Customer Publication, Si Etch, Silicon/Dielectrics Etch, Silicon/Dielectrics PECVD, SiO2 PECVD

Packaging and design of a heterogeneous dual laser chip for a widely tunable spectrally pure optical RF source

David W. Grund Jr., Garrett J. Schneider, Janusz Murakowski, and Dennis W. Prather
Electrical and Computer Engineering, University of Delaware, Newark, Delaware, USA
Optics Express (2014) 22, 17, pp. 19838-19849

Samco ICP Etch System was used for silicon fine etching.
Then, Samco PECVD System was used for SiO2 layer deposition to isolate a metal heater from the etched silicon layer.

For details of SiO2 PECVD process capabilities, please visit the page below.
SiO2 PECVD Process

08 Aug

Scientific Paper on AlGaN/GaN MOSFET from Dalian University of Technology and The University of Tokushima

Samco 2014 Customer, Power Devices, SAMCO Customer Publication, Silicon/Dielectrics PECVD, SiO2 PECVD

Process dependency on threshold voltage of GaN MOSFET on AlGaN/GaN heterostructure

Qingpeng Wanga, b, Ying , b, Takahiro Miyashitac, Shin-ichi Motoyamac, Liuan Lib, Dejun Wanga, Yasuo Ohnob and Jin-Ping Aob
a School of Electronic Science and Technology, Dalian University of Technology, 2 Linggong Road, Ganjingzi District, Dalian 116024, China
b Institute of Technology and Science, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
c Research and Development Department, SAMCO Inc., 36 Waraya-cho, Takeda, Fushimi-ku, Kyoto 612-8443, Japan
Solid-State Electronics (2014) 99, Pages 59–64

Samco PECVD system was used for SiO2 insulation film deposition.
This paper is collaboration work of Dalian University of Technology, The University of Tokushima and Samco.

SiO2 Periodic Table
For more details of our SiO2 PECVD technologies, please visit the page below.
SiO2 PECVD Process

01 Jun

Scientific Paper on AlGaN/GaN MOSFET Using SiO2 PECVD from Dalian University of Technology Team

Samco 2014 Customer, Power Devices, SAMCO Customer Publication, Silicon/Dielectrics PECVD, SiO2 PECVD

Field isolation for GaN MOSFETs on AlGaN/GaN heterostructure with boron ion implantation

Y Jiang1,2, Q P Wang1,2, K Tamai2, L A Li2, S Shinkai3, T Miyashita4, S-I Motoyama4, D J Wang1,5, J-P Ao2,5 and Y Ohno2,6
1 School of Electronic Science and Technology, Dalian University of Technology, Dalian, Liaoning 116024, People’s Republic of China
2 Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
3 Center for microelectronic system, Kyushu Institute of Technology, Fukuoka 820-8502, Japan
4 Research and Development Department, SAMCO Inc., Kyoto 612-8443, Japan
5 Author to whom any correspondence should be addressed.
6 Present address: e-Device, Inc., Sapporo 063-0801, Japan.
Semicond. Sci. Technol. (2014) 29 055002

Samco PECVD system was used for gate oxide formation in GaN power device fabrication. This paper is collaboration work of Dalian University of Technology, The University of Tokushima, Kyushu Institute of Technology and Samco.

SiO2 Periodic Table

For our process solutions of GaN power device fabrication, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication

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