Micro-fabricated Si subwavelength grating for frequency-domain THz beam steering covering the 0.3–0.5 THz frequency band

Kohei Chiba, Taiyu Okatani, Naoki Inomata, and Yoshiaki Kanamori

Graduate School of Engineering, Department of Robotics, Tohoku University, 6-6-01 Aoba, Aramaki,
Aoba-ku, Sendai, Miyagi, Japan

Opt. Express 31, 27147-27160 (2023)

Samco PECVD system PD-100ST was used for SiO₂ film deposition using TEOS.

Run-to-Run Yield Evaluation of Improved Nb 9-layer
Advanced Process using Single Flux Quantum Shift Register
Chip with 68,990 Josephson Junctions

Shuichi Nagasawa and Mutsuo Hidaka
National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1
Umezono, Tsukuba 305-8568, Japan
IOP Conf. Series: Journal of Physics: Conf. Series 871 (2017) 012065

Sputter SiO₂ deposition process has a challenge in reproducibility in device fabrication.
In this paper, as an alternative of the sputter deposition method, PECVD deposition method was developed in combination with Ar ion milling. Samco PECVD system, PD-270STL at AIST was used for SiO₂ insulation layer deposition. With effective chamber conditioning, SiO₂ insulation with less particles was achieved with an excellent run-to-run reproducibility.

This research was presented at 29th International Symposium on Superconductivity.

For more details of our SiO₂ PECVD process capabilities,
please visit the process data page below.
SiO₂ PECVD Data

High Responsivity MgZnO Ultraviolet Thin-Film Phototransistor Developed Using Radio Frequency Sputtering

Jyun-Yi Li, Sheng-Po Chang *, Ming-Hung Hsu and Shoou-Jinn Chang
Department of Electrical Engineering and Advanced Optoelectronic Technology Center, Institute of Microelectronics, National Cheng Kung University, Tainan 701, Taiwan
Materials 2017, 10(2), 126

Ultraviolet phototransistors were fabricated using Mg-doped ZnO film to achieve high mobility, a fast on–off transition, and high responsivity under deep UV illumination. Samco PECVD equipment PD-220NA was used for 200 nm thick SiO₂ film deposition as a dielectric layer.

Samco offers high-speed SiO₂ and SiN_x film deposition technologies for various device applications. Also, we provide low-temperature PECVD (under 80°C) for device fabrication using heat-sensitive materials.
For more details of the plasma deposition process capabilities, please visit the process solution page below.
High-speed SiO₂ and SiN_x Deposition
Low-temperature SiO₂ and SiN_x PECVD Process

Dielectric Coating Thermal Stabilization During GaAs-Based Laser Fabrication for Improved Device Yield

MICHAEL K. CONNORS^1,3, JAMAL E. MILLSAPP² and GEORGE W. TURNER^1
1 Lincoln Laboratory, Massachusetts Institute of Technology, 244 Wood Street, Lexington, MA 02
420, USA.
² Toho Technology Inc., Chicago, IL 60625, USA.
Journal of Electronic Materials (2016) pp 1-7

A 300-nm thick SiO₂ film was deposited using Samco Cathode PECVD system, PD-200STP to insulate the exposed ridge sidewalls.

For more details on Samco’s low-temperature PECVD technologies and process capabilities, please visit our featured process solution page below.
Low-temperature PECVD for SiO₂ & SiN_x Deposition

Direct Growth and Controlled Coalescence of Thick AlN Template on Micro-circle Patterned Si Substrate

Binh Tinh Tran, Hideki Hirayama, Noritoshi Maeda, Masafumi Jo, Shiro Toyoda and Norihiko Kamata
Quantum Optodevice Laboratory, Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
Sci Rep. (2015) 5 14734.

SiO2 film was deposited on Si substrate, using Samco PECVD system.
Then, Si was etched over SiO2 film, using Samco ICP etcher for microscale patterning.

For more details of our SiO₂ PECVD & Si plasma etching capabilities, please visit the process data pages below.
SiO₂ PECVD Process Data
Silicon Plasma Etching Process Data (RIE or ICP Etch)

A self-aligned gate GaN MOSFET using an ICP-assisted low-temperature Ohmic process

Qingpeng Wang^1,2, Ying Jiang^1,2, Jiaqi Zhang^1,2, Kazuya Kawaharada¹, Liuan Li¹, Dejun Wang² and Jin-Ping Ao^1
1 Institute of Technology and Science, the University of Tokushima, Tokushima 770-8506, Japan
² School of Electronic Science and Technology, Dalian University of Technology, Dalian 116023, People’s Republic of China
Semicond. Sci. Technol. (2015) 30 075003

Samco PECVD system was used for gate oxide (SiO₂) formation in GaN MOSFET fabrication.

For our process solutions of GaN power device fabrication, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication/

Also, SiO₂ PECVD process data can be found in the page below.
SiO₂ PECVD Process

Packaging and design of a heterogeneous dual laser chip for a widely tunable spectrally pure optical RF source

David W. Grund Jr., Garrett J. Schneider, Janusz Murakowski, and Dennis W. Prather
Electrical and Computer Engineering, University of Delaware, Newark, Delaware, USA
Optics Express (2014) 22, 17, pp. 19838-19849

Samco ICP Etch System was used for silicon fine etching.
Then, Samco PECVD System was used for SiO₂ layer deposition to isolate a metal heater from the etched silicon layer.

For details of SiO₂ PECVD process capabilities, please visit the page below.
SiO₂ PECVD Process

Process dependency on threshold voltage of GaN MOSFET on AlGaN/GaN heterostructure

Qingpeng Wang^{a, b}, Ying ^{, b}, Takahiro Miyashita^c, Shin-ichi Motoyama^c, Liuan Li^b, Dejun Wang^a, Yasuo Ohno^b and Jin-Ping Ao^b
a School of Electronic Science and Technology, Dalian University of Technology, 2 Linggong Road, Ganjingzi District, Dalian 116024, China
^b Institute of Technology and Science, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
^c Research and Development Department, SAMCO Inc., 36 Waraya-cho, Takeda, Fushimi-ku, Kyoto 612-8443, Japan
Solid-State Electronics (2014) 99, Pages 59–64

Samco PECVD system was used for SiO2 insulation film deposition.
This paper is collaboration work of Dalian University of Technology, The University of Tokushima and Samco.

For more details of our SiO₂ PECVD technologies, please visit the page below.
SiO₂ PECVD Process

Field isolation for GaN MOSFETs on AlGaN/GaN heterostructure with boron ion implantation

Y Jiang^1,2, Q P Wang^1,2, K Tamai², L A Li², S Shinkai³, T Miyashita⁴, S-I Motoyama⁴, D J Wang^1,5, J-P Ao^2,5 and Y Ohno^2,6
1 School of Electronic Science and Technology, Dalian University of Technology, Dalian, Liaoning 116024, People’s Republic of China
² Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
³ Center for microelectronic system, Kyushu Institute of Technology, Fukuoka 820-8502, Japan
⁴ Research and Development Department, SAMCO Inc., Kyoto 612-8443, Japan
⁵ Author to whom any correspondence should be addressed.
⁶ Present address: e-Device, Inc., Sapporo 063-0801, Japan.
Semicond. Sci. Technol. (2014) 29 055002

Samco PECVD system was used for gate oxide formation in GaN power device fabrication. This paper is collaboration work of Dalian University of Technology, The University of Tokushima, Kyushu Institute of Technology and Samco.

For our process solutions of GaN power device fabrication, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication