Stable Device Isolation Processing for 6-Inch GaN-Based Power Devices
GaN device isolation etching using ICP-RIE and endpoint detection enables uniform processing and stable multi-wafer semiconductor production.
Institute of Science Tokyo: Professor Yasuyuki Miyamoto
Advancing high-speed transistors with InP and GaN, Professor Yasuyuki Miyamoto explores the future of compound semiconductors and shares insights on Samco’s key role in research.
Special Lecture on GaN Technology by Nagoya University Professor Jun Suda
Professor Jun Suda of Nagoya University gave a special lecture at Samco on GaN devices, sharing insights on materials, processing, and future technologies.
MIT’s Dr. Tomás Palacios Visits Samco to Explore Future Microelectronics Innovations
MIT Professor Tomás Palacios visited Samco to discuss next-generation microelectronics, advanced materials, and potential research collaboration.
AlGaN/GaN Etch Challenges for GaN Power Device Fabrication
Explore key etching challenges in AlGaN/GaN power device fabrication and solutions for precise plasma etching of GaN-based semiconductor structures.