Simultaneous Double-sided Wafer Deposition via Plasma Enhanced ALD
Report investigating simultaneous dual-surface deposition of AlOx films on silicon wafers using the Plasma Enhanced Atomic Layer Deposition (PEALD) technique.
Report investigating simultaneous dual-surface deposition of AlOx films on silicon wafers using the Plasma Enhanced Atomic Layer Deposition (PEALD) technique.
Samco Inc. (TSE: 6387), was honored to host Dr. Tomás Palacios, Director of the Microsystems Technology Laboratories at MIT and Clarence J. LeBel Professor in Electrical Engineering and Computer Science, during his visit to discuss potential collaborations in research and development. His visit marks an exciting opportunity to explore advancements in microelectronics through innovative materials,…
Atomic Layer Deposition Tutorial: Introduction to ALD Atomic Layer Deposition (ALD) is a thin-film deposition technique that utilizes self-limiting surface chemical reactions to achieve precise layer-by-layer growth. By alternately introducing and exhausting two or more reactants into the reaction chamber, ALD enables excellent film thickness control, superior step coverage, and high conformality. As demand for…