A CMOS-Compatible Fabrication Process for Scaled Self-Aligned InGaAs MOSFETs

Lin, J., D. A. Antoniadis, and J. A. del Alamo
presented at Compound Semiconductor Manufacturing Technology Conference (CS MANTECH), Scottsdale, AZ, May 18-21, 2015, pp. 239-242.

Samco ICP etching system, RIE-200iP was used for optimization of InGaAs/InAlAs/InP dry etching process.

Go to Prof. Jesús A. del Alamo Research Group Website

Single-Cell Isolation and Size Sieving Using Microenclosure Array for Microbial Analysis

Akihiro Matsutani^* and Ayako Takada¹
Semiconductor and MEMS Processing Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
¹Biomaterial Analysis Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8501, Japan
Sensors and Materials, Volume 27, Number 5 (2015)

Samco open-load ICP etch system was used for fabrication of micropillar fabrication on InP substrates for cell isolation and size sieving.

For more details of our InP plasma etching capabilities, please visit the page below.
InP Dry Etching Process (RIE or ICP-RIE)

Normally-off AlGaN/GaN high-electron-mobility transistor using digital etching technique

Ryota Yamanaka¹, Toru Kanazawa¹, Eiji Yagyu² and Yasuyuki Miyamoto¹
1 Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
2 Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
Japanese Journal of Applied Physics (2015) 54, 06FG04

SAMCO Reactive Ion Etching System, RIE-10NR was used for fabrication of recessed gate structure of normally-off AlGaN/GaN high-electron-mobility transistor (HEMT).
Undercut issue in recess etching was resolved with the RIE process.

For our process solutions of GaN based power device fabrication, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication

Nanometer-Scale Vertical-Sidewall Reactive Ion Etching of InGaAs for 3-D III-V MOSFETs

Xin Zhao and Jesús A. del Alamo
Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA 02139 USA
IEEE ELECTRON DEVICE LETTERS (2014) 35, 5

Samco ICP etch system was used for fabrication of InGaAs nanowires. The nanowires showed vertical and smooth sidewalls by optimization of the etch recipe.
Massachusetts Institute of Technology (MIT) is one of the proprietary customers of Samco plasma etching systems. They use our process equipment for plasma etching of III-V materials such as GaN, GaAs and InGaAs in various device projects.

For our process capabilities of GaAs plasma etching, please visit the page below.
GaAs Dry Etching Process (ICP-RIE)

Inductively coupled plasma reactive ion etching of GaAs wafer pieces with enhanced device yield

Michael K. Connors, Leo J. Missaggia, William S. Spencer and George W. Turner
Lincoln Laboratory, Massachusetts Institute of Technology, 244 Wood Street, Lexington, Massachusetts 02420
J. Vac. Sci. Technol. B 32, 021207 (2014)

SAMCO ICP Etching System, RIE-200iP was used for process investigation of GaAs plasma etching.

For more details of our GaAs plasma etching technologies, please visit the page below.
GaAs Dry Etching Process (ICP-RIE)

High-temperature, continuous-wave operation of terahertz quantum-cascade lasers with metal-metal waveguides and third-order distributed feedback

M. Wienold, B. Röben, L. Schrottke, R. Sharma, A. Tahraoui, K. Biermann and H. T. Grahn
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5–7, 10117 Berlin, Germany
Opt Express. (2014) 22 (3):3334-48
SAMCO ICP Etch System is used for fabrication of GaAs/AlGaAs terahertz quantum-cascade lasers (THz QCLs).

For more details of our GaAs dry etch capabilities, please visit the page below.
GaAs Dry Etching Process (ICP-RIE)

Fabrication of high-aspect-ratio double-slot photonic crystal waveguide in InP heterostructure by inductively coupled plasma etching using ultra-low pressure

Kaiyu Cui, Yongzhuo Li, Xue Feng, Yidong Huang and Wei Zhang
Department of Electronic Engineering, Tsinghua National Laboratory for Information Science and Technology, Tsinghua University, Beijing 100084, China
AIP ADVANCES (2013) 3, 022122

InP photonic crystal waveguide was fabricated using SAMCO ICP Etch System.

For more details of our InP dry etching process capabilities, please visit the page below.
InP Dry Etching Process (RIE or ICP-RIE)

Microwave performance of AlGaN/AlN/GaN -based single and coupled channels HFETs

R. A. Ferreyra, X. Li, F. Zhang, C. Zhu, N. Izyumskaya, C. Kayis, V. Avrutin, Ü. Özgür, and H. Morkoç
Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA, USA 23284-3072
Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 86252B (March 27, 2013)

SAMCO ICP Etch System at Virginia Commonwealth University was used for mesa isolation of AlGaN/AlN/GaN heterostructures.

For our process solutions for GaN power device fabrication, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication

Also, for more information on our GaN plasma etching process capabilities, please visit the process data page below.
GaN Plasma Etching Process (RIE or ICP Etching)

Chamber conditioning process development for improved inductively coupled plasma reactive ion etching of GaAs/AlGaAs materials

Michael K. Connors, Jason J. Plant, Kevin G. Ray, and George W. Turner
Lincoln Laboratory, Massachusetts Institute of Technology
J. Vac. Sci. Technol. B 31, 021207 (2013)

SAMCO ICP Etching System, RIE-200iP was used for GaAs plasma etching process investigation.

For more details of our GaAs plasma etching capabilities, please visit the page below.
GaAs Dry Etching Process (ICP-RIE)

Lateral distributed-feedback gratings for single-mode, high-power terahertz quantum-cascade lasers

M. Wienold, A. Tahraoui, L. Schrottke, R. Sharma, X. Lü, K. Biermann, R. Hey, and H. T. Grahn
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany
Optics Express Vol.20, Issue 10, pp. 11207-11217 (2012)

SAMCO ICP Etching System was used for GaAs/AlGaAs dry etching over SiO₂ mask in fabrication of Terahertz quantum-cascade lasers (THz QCLs).

For our capabilities of GaAs dry etching, please visit the process data page below.
GaAs Dry Etching Process (ICP-RIE)