Electric car on charging spot with solar panels and wind energy in front of landscape (Showing application of power devices using SiC Trench MOSFETs

New Approach for Trench Type SiC MOSFET

Introduction Compared to the mainstream semiconductor Si, the wide bandgap semiconductor 4H-SiC has excellent material qualities including higher electrical breakdown strength and higher thermal conductivity. Therefore, 4H-SiC has been studied in recent years as a new material to improve miniaturization and energy saving in power devices. Currently, it is being developed not only for device…