ICP Etching Process for Realizing SiC Trench MOSFETs
Advanced ICP trench etching for SiC MOSFETs achieving over 700 nm/min etch rates, rounded trench bottoms, and high uniformity on 6-inch wafers.
National Institute of Advanced Industrial Science and Technology (AIST): Takahiro Mori Ph.D.
Research on silicon spin qubits for quantum computing, using PD-2201LC, RIE-400iPC, and RIE-230LC.
UV-Ozone Cleaning: Fundamentals, Advantages, and Applications
Learn how UV-ozone cleaning works, its advantages over plasma cleaning, and applications in semiconductor surface preparation and materials research.
Part 4 – Loading Effect and Microloading Effect in Silicon Deep Reactive Ion Etching
Explore loading and microloading effects in silicon DRIE and how process optimization improves etch uniformity and depth control in MEMS fabrication.
Surface Treatment of Gold Using Aqua Plasma®
Aqua Plasma® treatment prevents oxidation, reduces gold surface oxides, and improves hydrophilicity for semiconductor manufacturing processes.
Part 3 – Equipment Advances for the Bosch Process
Learn key Bosch process hardware advances (including ICP source design, RF power control, fast gas switching, and pumping) to improve Si DRIE performance and profiles.
AlGaN/GaN Etch Challenges for GaN Power Device Fabrication
Key etching challenges in AlGaN/GaN power device fabrication and solutions for precise plasma etching of GaN-based semiconductor structures.
Part 2 – What is the Bosch Process (Deep Reactive Ion Etching)?
Learn how the Bosch process enables deep silicon DRIE with high aspect ratio features, using cyclic deposition and etching steps for anisotropic profiles and high selectivity.
Long-Term Process Stability of “PD-220 Series” Systems
Long-term data shows stable SiN deposition using Samco’s PD-220 plasma CVD systems, maintaining ±2% uniformity over six months with reduced maintenance downtime.
ICFO: Dr. Johann Osmond
Nanophotonics research, advanced applications, and the role of RIE-10NR in ICFO’s photonics projects.