Part 4 – Loading Effect and Microloading Effect in Silicon Deep Reactive Ion Etching
Explore loading and microloading effects in silicon DRIE and how process optimization improves etch uniformity and depth control in MEMS fabrication.
Surface Treatment of Gold Using Aqua Plasma®
Aqua Plasma® treatment prevents oxidation, reduces gold surface oxides, and improves hydrophilicity for semiconductor manufacturing processes.
Part 3 – Equipment Advances for the Bosch Process
Learn key Bosch process hardware advances (including ICP source design, RF power control, fast gas switching, and pumping) to improve Si DRIE performance and profiles.
AlGaN/GaN Etch Challenges for GaN Power Device Fabrication
Key etching challenges in AlGaN/GaN power device fabrication and solutions for precise plasma etching of GaN-based semiconductor structures.
Part 2 – What is the Bosch Process (Deep Reactive Ion Etching)?
Learn how the Bosch process enables deep silicon DRIE with high aspect ratio features, using cyclic deposition and etching steps for anisotropic profiles and high selectivity.
Long-Term Process Stability of “PD-220 Series” Systems
Long-term data shows stable SiN deposition using Samco’s PD-220 plasma CVD systems, maintaining ±2% uniformity over six months with reduced maintenance downtime.
ICFO: Dr. Johann Osmond
Nanophotonics research, advanced applications, and the role of RIE-10NR in ICFO’s photonics projects.
Part 1 – Introduction to Si DRIE (Silicon Deep Reactive Ion Etching)
An introduction to Si DRIE, comparing Bosch, non-Bosch, and cryogenic processes and how Samco systems support MEMS, TSV, and packaging applications.
Innovation with the New Plasma Source HSTC-M™
Samco introduces the HSTC-M™ plasma source for uniform, stable ICP etching of SiC and GaN power devices up to 8-inch wafers across research and production systems.
RIKEN: Dr. Takuo Tanaka
Optical metamaterials research, including nanostructures for light manipulation and high-sensitivity molecular detection, using Samco’s RIE-400iP.