Samco Inc. will be presenting a poster, “Stabilization of Etch Rate in SiO₂ Quasi-ALE Using an O₂ Plasma,” at ALD/ALE 2026, The AVS 26th International Conference on Atomic Layer Deposition featuring the 13th International Atomic Layer Etching Workshop, taking place from June 28 to July 1, 2026, at the JW Marriott Water Street in Tampa, Florida.
As semiconductor devices continue to scale and process requirements become increasingly precise, atomic layer etching is gaining attention as a key technology for controlled, low-damage material removal. Samco’s poster will share research related to improving etch rate stability in SiO₂ quasi-atomic layer etching using O₂ plasma.
The presentation will be part of the ALE-MoP: Atomic Layer Etching Poster Session, scheduled for Monday, June 29, from 5:45 PM to 7:00 PM in Tampa Bay Salons 5–9. The research addresses an important process challenge in SiO₂ quasi-ALE, where stable and repeatable etching performance is essential for advanced semiconductor manufacturing.
Atomic layer etching enables highly controlled material removal through sequential process steps. As device structures become more complex, process stability is increasingly important for achieving uniform results across wafers and from run to run.
Through this poster presentation, Samco will contribute to ongoing technical discussions around plasma-based etching, ALE process control, and next-generation semiconductor manufacturing technologies.
Conference attendees interested in SiO₂ quasi-ALE, plasma process development, or advanced etching solutions are encouraged to visit Samco’s poster during the session.
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